Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SI1441EDH-T1-GE3
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Vishay Siliconix MOSFET P-CH 20V 4A SOT-363 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-TSSOP, SC-88, SOT-363 SOT-363 2.8W (Tc) P-Channel - 20V 4A (Tc) 41 mOhm @ 5A, 4.5V 1V @ 250µA 33nC @ 8V - 1.8V, 4.5V ±10V
SI8481DB-T1-E1
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2,447
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Vishay Siliconix MOSFET P-CH 20V 9.7A 4-MICROFOOT TrenchFET® Gen III Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 4-UFBGA 4-MICRO FOOT® (1.6x1.6) 2.8W (Tc) P-Channel - 20V 9.7A (Tc) 21 mOhm @ 3A, 4.5V 900mV @ 250µA 47nC @ 4.5V 2500pF @ 10V 1.8V, 4.5V ±8V