Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
FDMA908PZ
RFQ
VIEW
RFQ
3,572
In-stock
ON Semiconductor MOSFET P-CH 12V 12A 6QFN PowerTrench® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-WDFN Exposed Pad 6-MicroFET (2x2) 2.4W (Ta) P-Channel - 12V 12A (Ta) 12.5 mOhm @ 12A, 4.5V 1V @ 250µA 34nC @ 4.5V 3957pF @ 6V 1.8V, 4.5V ±8V
MCM1206-TP
RFQ
VIEW
RFQ
3,690
In-stock
Micro Commercial Co MOSFET P-CH 12V 6A DFN202 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-WDFN Exposed Pad DFN2020-6J - P-Channel - 12V 6A (Ta) 45 mOhm @ 3.5A, 4.5V 0.9V @ 250µA 7.8nC @ 4.5V 740pF @ 4V 1.8V, 4.5V ±8V
FDMA507PZ
RFQ
VIEW
RFQ
3,765
In-stock
ON Semiconductor MOSFET P-CH 20V 6-MICROFET PowerTrench® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-WDFN Exposed Pad 6-MicroFET (2x2) 2.4W (Ta) P-Channel - 20V 7.8A (Ta) 24 mOhm @ 7.8A, 5V 1.5V @ 250µA 42nC @ 5V 2015pF @ 10V 1.8V, 4.5V ±8V
CSD25310Q2
RFQ
VIEW
RFQ
1,257
In-stock
Texas Instruments MOSFET P-CH 20V 48A 6SON NexFET™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) - 6-WDFN Exposed Pad 6-WSON (2x2) 2.9W (Ta) P-Channel - 20V 20A (Ta) 23.9 mOhm @ 5A, 4.5V 1.1V @ 250µA 4.7nC @ 4.5V 655pF @ 10V 1.8V, 4.5V ±8V
NTLJF3117PT1G
RFQ
VIEW
RFQ
2,070
In-stock
ON Semiconductor MOSFET P-CH 20V 2.3A 6-WDFN µCool™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-WDFN Exposed Pad 6-WDFN (2x2) 710mW (Ta) P-Channel Schottky Diode (Isolated) 20V 2.3A (Ta) 100 mOhm @ 2A, 4.5V 1V @ 250µA 6.2nC @ 4.5V 531pF @ 10V 1.8V, 4.5V ±8V