Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SIB411DK-T1-E3
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1,381
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Vishay Siliconix MOSFET P-CH 20V 9A SC75-6 TrenchFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SC-75-6L PowerPAK® SC-75-6L Single 2.4W (Ta), 13W (Tc) P-Channel - 20V 9A (Tc) 66 mOhm @ 3.3A, 4.5V 1V @ 250µA 15nC @ 8V 470pF @ 10V 1.8V, 4.5V ±8V
TPCF8B01(TE85L,F,M
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2,422
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Toshiba Semiconductor and Storage MOSFET P-CH 20V 2.7A VS-8 U-MOSIII Obsolete Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-SMD, Flat Lead VS-8 (2.9x1.5) 330mW (Ta) P-Channel Schottky Diode (Isolated) 20V 2.7A (Ta) 110 mOhm @ 1.4A, 4.5V 1.2V @ 200µA 6nC @ 5V 470pF @ 10V 1.8V, 4.5V ±8V
SI1469DH-T1-GE3
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RFQ
3,379
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Vishay Siliconix MOSFET P-CH 20V 2.7A SC-70-6 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-TSSOP, SC-88, SOT-363 SC-70-6 (SOT-363) 1.5W (Ta), 2.78W (Tc) P-Channel - 20V 2.7A (Tc) 80 mOhm @ 2A, 10V 1.5V @ 250µA 8.5nC @ 4.5V 470pF @ 10V 2.5V, 10V ±12V
SI1469DH-T1-E3
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RFQ
3,816
In-stock
Vishay Siliconix MOSFET P-CH 20V 2.7A SC70-6 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-TSSOP, SC-88, SOT-363 SC-70-6 (SOT-363) 1.5W (Ta), 2.78W (Tc) P-Channel - 20V 2.7A (Tc) 80 mOhm @ 2A, 10V 1.5V @ 250µA 8.5nC @ 4.5V 470pF @ 10V 2.5V, 10V ±12V