- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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5 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
2,831
In-stock
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Rohm Semiconductor | PCH -20V -5A MIDDLE POWER MOSFET | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SC-95-6 | TSMT6 (SC-95) | 1.25W (Tc) | P-Channel | - | 20V | 5A (Tc) | 36 mOhm @ 5A, 4.5V | 1.2V @ 1mA | 10.4nC @ 4.5V | 740pF @ 10V | 4.5V | ±8V | |||
|
VIEW |
2,387
In-stock
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Diodes Incorporated | MOSFET P-CH 20V 4.2A TSOT-26 | - | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | TSOT-26 | 1.2W (Ta) | P-Channel | - | 20V | 4.2A (Ta) | 65 mOhm @ 4.2A, 4.5V | 900mV @ 250µA | 10.4nC @ 4.5V | 845pF @ 15V | 1.8V, 4.5V | ±8V | |||
|
VIEW |
3,643
In-stock
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Rohm Semiconductor | MOSFET P-CHANNEL 30V 18A 8HSMT | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-HSMT (3.2x3) | 15W (Tc) | P-Channel | - | 30V | 18A (Tc) | 23 mOhm @ 7.5A, 10V | 2.5V @ 1mA | 10.4nC @ 4.5V | 930pF @ 15V | 10V | ±20V | |||
|
VIEW |
3,305
In-stock
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Toshiba Semiconductor and Storage | MOSFET P CH 20V 3.4A ES6 | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 | 500mW (Ta) | P-Channel | - | 20V | 3.4A (Ta) | 59 mOhm @ 3A, 4.5V | 1V @ 1mA | 10.4nC @ 4.5V | 630pF @ 10V | 1.5V, 4.5V | ±8V | |||
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VIEW |
3,375
In-stock
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Toshiba Semiconductor and Storage | MOSFET P CH 20V 4A SOT-23F | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 1W (Ta) | P-Channel | - | 20V | 4A (Ta) | 55 mOhm @ 3A, 4.5V | 1V @ 1mA | 10.4nC @ 4.5V | 630pF @ 10V | 1.5V, 4.5V | ±8V | |||
