Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SQ3457EV-T1_GE3
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Vishay Siliconix MOSFET P-CHANNEL 30V 6.8A 6TSOP Automotive, AEC-Q101, TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 6-TSOP 5W (Tc) P-Channel - 30V 6.8A (Tc) 65 mOhm @ 6A, 10V 2.5V @ 250µA 21nC @ 10V 705pF @ 15V 4.5V, 10V ±20V
SI2319CDS-T1-GE3
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1,475
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Vishay Siliconix MOSFET P-CH 40V 4.4A SOT-23 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 1.25W (Ta), 2.5W (Tc) P-Channel - 40V 4.4A (Tc) 77 mOhm @ 3.1A, 10V 2.5V @ 250µA 21nC @ 10V 595pF @ 20V 4.5V, 10V ±20V
SI2343CDS-T1-GE3
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3,955
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Vishay Siliconix MOSFET P-CH 30V 5.9A SOT-23 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 1.25W (Ta), 2.5W (Tc) P-Channel - 30V 5.9A (Tc) 45 mOhm @ 4.2A, 10V 2.5V @ 250µA 21nC @ 10V 590pF @ 15V 4.5V, 10V ±20V
SI4485DY-T1-GE3
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2,268
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Vishay Siliconix MOSFET P-CH 30V 6A 8-SOIC TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.4W (Ta), 5W (Tc) P-Channel - 30V 6A (Tc) 42 mOhm @ 5.9A, 10V 2.5V @ 250µA 21nC @ 10V 590pF @ 15V 4.5V, 10V ±20V