- Manufacture :
- Series :
- Package / Case :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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2 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
1,067
In-stock
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Vishay Siliconix | MOSFET P-CH 20V 7.7A MICRO FOOT | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 30-XFBGA | Power Micro Foot® (2.4x2) | 660mW (Ta) | P-Channel | 20V | 7.7A (Ta) | 8 mOhm @ 7A, 4.5V | 1V @ 250µA | 180nC @ 8V | 6900pF @ 10V | 1.8V, 4.5V | ±8V | |||
|
VIEW |
818
In-stock
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Diodes Incorporated | MOSFET P-CH 12V 9.1A 6UDFN | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2020-6 (Type E) | 660mW (Ta) | P-Channel | 12V | 9.1A (Ta) | 16 mOhm @ 8.2A, 4.5V | 800mV @ 250µA | 42.6nC @ 5V | 2953pF @ 4V | 1.2V, 4.5V | ±8V | |||
