- Manufacture :
- Series :
- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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8 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
1,910
In-stock
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ON Semiconductor | MOSFET P-CH 20V 3A 6-MICROFET | PowerTrench® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | MicroFET 2x2 Thin | 1.4W (Ta) | P-Channel | Schottky Diode (Isolated) | 20V | 3A (Ta) | 120 mOhm @ 3A, 4.5V | 1.3V @ 250µA | 6nC @ 4.5V | 435pF @ 10V | 1.8V, 4.5V | ±8V | |||
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|
VIEW |
3,596
In-stock
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ON Semiconductor | MOSFET P-CH 20V 3A MICROFET | PowerTrench® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | MicroFET 2x2 Thin | 1.4W (Ta) | P-Channel | Schottky Diode (Isolated) | 20V | 3A (Ta) | 120 mOhm @ 3A, 4.5V | 1.3V @ 250µA | 6nC @ 4.5V | 435pF @ 10V | 1.8V, 4.5V | ±8V | |||
|
VIEW |
2,773
In-stock
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NXP USA Inc. | MOSFET P-CH 20V 3.5A SOT1118 | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | DFN2020-6 | 520mW (Ta), 8.3W (Tc) | P-Channel | Schottky Diode (Isolated) | 20V | 3.5A (Ta) | 70 mOhm @ 1A, 4.5V | 1V @ 250µA | 6nC @ 4.5V | 380pF @ 10V | 1.8V, 4.5V | ±8V | |||
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|
VIEW |
1,348
In-stock
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NXP USA Inc. | MOSFET P-CH 20V 3.5A SOT1118 | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | DFN2020-6 | 520mW (Ta), 8.3W (Tc) | P-Channel | Schottky Diode (Isolated) | 20V | 3.5A (Ta) | 70 mOhm @ 1A, 4.5V | 1V @ 250µA | 6nC @ 4.5V | 380pF @ 10V | 1.8V, 4.5V | ±8V | |||
|
VIEW |
2,490
In-stock
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Diodes Incorporated | MOSFET P-CH 25V 6.7A 6UDFN | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2020-6 (Type E) | 800mW (Ta) | P-Channel | - | 25V | 6.7A (Ta) | 27 mOhm @ 6.4A, 4.5V | 1V @ 250µA | 48.7nC @ 8V | 2530pF @ 15V | 1.8V, 4.5V | ±8V | |||
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|
VIEW |
3,813
In-stock
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Diodes Incorporated | MOSFET P-CH 25V 6.7A 6UDFN | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2020-6 (Type E) | 800mW (Ta) | P-Channel | - | 25V | 6.7A (Ta) | 27 mOhm @ 6.4A, 4.5V | 1V @ 250µA | 48.7nC @ 8V | 2530pF @ 15V | 1.8V, 4.5V | ±8V | |||
|
VIEW |
739
In-stock
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Diodes Incorporated | MOSFET P-CH 12V 26A UDFN2020-6 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2020-6 (Type F) | 2.1W (Ta) | P-Channel | - | 12V | 26A (Tc) | 8.5 mOhm @ 5A, 4.5V | 1V @ 250µA | 47nC @ 8V | 2475pF @ 6V | 1.8V, 4.5V | ±8V | |||
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VIEW |
3,668
In-stock
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Diodes Incorporated | MOSFET P-CH 12V 15A UDFN2020-6 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2020-6 (Type F) | 2W (Ta) | P-Channel | - | 12V | 15A (Ta) | 11 mOhm @ 5A, 4.5V | 1V @ 250µA | 44nC @ 8V | 1860pF @ 10V | 1.8V, 4.5V | ±8V | |||
