- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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2 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
3,673
In-stock
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Texas Instruments | MOSFET P-CH 20V 4A 9DSBGA | NexFET™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 9-UFBGA, DSBGA | 9-DSBGA | 1.5W (Ta) | P-Channel | - | 20V | 4A (Ta) | 40 mOhm @ 2A, 4.5V | 1.1V @ 250µA | 5.6nC @ 4.5V | 510pF @ 10V | 1.8V, 4.5V | -6V | |||
|
VIEW |
3,090
In-stock
|
Texas Instruments | MOSFET P-CH 12V 2.2A 4DSBGA | NexFET™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 4-UFBGA, DSBGA | 4-DSBGA (1x1) | 1W (Ta) | P-Channel | - | 12V | 2.2A (Tc) | 82 mOhm @ 500mA, 4.5V | 1V @ 250µA | 2.4nC @ 4.5V | 325pF @ 6V | 1.5V, 4.5V | -6V | |||
