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- Supplier Device Package :
- Power Dissipation (Max) :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
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6 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
2,842
In-stock
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Vishay Siliconix | MOSFET P-CH 20V 2.8A 6-TSOP | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 6-TSOP | 1.25W (Ta), 2.1W (Tc) | P-Channel | - | 20V | 2.8A (Tc) | 115 mOhm @ 2.6A, 4.5V | 1.5V @ 250µA | 5.1nC @ 5V | 250pF @ 10V | 2.5V, 4.5V | ±12V | |||
|
VIEW |
1,805
In-stock
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Vishay Siliconix | MOSFET P-CH 20V 2.8A SOT23-3 | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) | 1W (Ta), 2.1W (Tc) | P-Channel | - | 20V | 2.8A (Tc) | 115 mOhm @ 2.4A, 4.5V | 1.5V @ 250µA | 5.1nC @ 5V | 250pF @ 10V | 2.5V, 4.5V | ±12V | |||
|
VIEW |
3,411
In-stock
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Diodes Incorporated | MOSFET P-CH 20V 2.6A SOT23-3 | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | 1.08W (Ta) | P-Channel | - | 20V | 2.6A (Ta) | 110 mOhm @ 2.6A, 4.5V | 1.25V @ 250µA | 5.3nC @ 4.5V | 250pF @ 10V | 2.5V, 4.5V | ±12V | |||
|
VIEW |
1,029
In-stock
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ON Semiconductor | MOSFET P-CH 30V 3.5A MCPH6 | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | SC-88FL/MCPH6 | 1.5W (Ta) | P-Channel | - | 30V | 3.5A (Ta) | 98 mOhm @ 1.5A, 10V | 2.6V @ 1mA | 5nC @ 10V | 250pF @ 10V | 4V, 10V | ±20V | |||
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|
VIEW |
1,888
In-stock
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Vishay Siliconix | MOSFET P-CH 20V 2.8A SOT23-3 | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) | 1W (Ta), 2.1W (Tc) | P-Channel | - | 20V | 2.8A (Tc) | 115 mOhm @ 2.4A, 4.5V | 1.5V @ 250µA | 5.1nC @ 5V | 250pF @ 10V | 2.5V, 4.5V | ±12V | |||
|
VIEW |
1,709
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 20V 1.5A UFV | U-MOSIII | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-SMD (5 Leads), Flat Lead | UFV | 500mW (Ta) | P-Channel | Schottky Diode (Isolated) | 20V | 1.5A (Ta) | 213 mOhm @ 1A, 4V | 1V @ 1mA | 6.4nC @ 4V | 250pF @ 10V | 1.8V, 4V | ±8V | |||
