Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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TSM2301CX RFG
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1,320
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Taiwan Semiconductor Corporation MOSFET P-CHANNEL 20V 2.8A SOT23 - Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23 900mW (Ta) P-Channel - 20V 2.8A (Tc) 130 mOhm @ 2.8A, 4.5V 950mV @ 250µA 4.5nC @ 4.5V 447pF @ 6V 2.5V, 4.5V ±8V
SI4845DY-T1-E3
RFQ
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RFQ
2,847
In-stock
Vishay Siliconix MOSFET P-CH 20V 2.7A 8-SOIC LITTLE FOOT® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 1.75W (Ta), 2.75W (Tc) P-Channel Schottky Diode (Isolated) 20V 2.7A (Tc) 210 mOhm @ 2A, 4.5V 1.5V @ 250µA 4.5nC @ 4.5V 312pF @ 10V 2.5V, 4.5V ±12V