- Series :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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6 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
2,423
In-stock
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ON Semiconductor | MOSFET P-CH 20V 2.4A 8MICRO | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Micro8™ | 780mW (Ta) | P-Channel | - | 20V | 2.4A (Ta) | 90 mOhm @ 2.4A, 4.5V | 1.4V @ 250µA | 18nC @ 4.5V | 550pF @ 16V | 2.5V, 4.5V | ±8V | |||
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VIEW |
2,464
In-stock
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ON Semiconductor | MOSFET P-CH 20V 2.4A MICRO8 | FETKY™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Micro8™ | 780mW (Ta) | P-Channel | Schottky Diode (Isolated) | 20V | 2.4A (Ta) | 90 mOhm @ 3.3A, 4.5V | 1.5V @ 250µA | 18nC @ 4.5V | 750pF @ 16V | 2.5V, 4.5V | ±10V | |||
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|
VIEW |
1,577
In-stock
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ON Semiconductor | MOSFET P-CH 20V 2.4A 8MICRO | FETKY™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Micro8™ | 780mW (Ta) | P-Channel | Schottky Diode (Isolated) | 20V | 2.4A (Ta) | 90 mOhm @ 3.3A, 4.5V | 1.5V @ 250µA | 18nC @ 4.5V | 750pF @ 16V | 2.5V, 4.5V | ±10V | |||
|
VIEW |
1,290
In-stock
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Infineon Technologies | MOSFET P-CH 20V 2.4A 6-TSOP | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | Micro6™(SOT23-6) | 1.7W (Ta) | P-Channel | - | 20V | 2.4A (Ta) | 200 mOhm @ 1.6A, 4.5V | 700mV @ 250µA | 8.8nC @ 4.5V | 210pF @ 15V | 2.7V, 4.5V | ±12V | |||
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VIEW |
3,409
In-stock
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ON Semiconductor | MOSFET P-CH 30V 2.4A SSOT6 | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | SuperSOT™-6 | 1.6W (Ta) | P-Channel | - | 30V | 2.4A (Ta) | 110 mOhm @ 3.1A, 10V | 3V @ 250µA | 20nC @ 10V | 290pF @ 15V | 4.5V, 10V | -20V | |||
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VIEW |
3,412
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 30V 2.4A TSM | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TSM | 700mW (Ta) | P-Channel | - | 30V | 2.4A (Ta) | 117 mOhm @ 1A, 10V | - | 2.5nC @ 15V | 280pF @ 15V | 4V, 10V | ±20V | |||
