- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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4 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||
|
VIEW |
3,102
In-stock
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Alpha & Omega Semiconductor Inc. | MOSFET P-CH 20V 1.8A 4WLCSP | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 4-SMD, No Lead | 4-AlphaDFN (0.97x0.97) | 450mW (Ta) | P-Channel | 20V | 1.8A (Ta) | 95 mOhm @ 1A, 4.5V | 1V @ 250µA | 4.8nC @ 4.5V | 405pF @ 10V | 1.5V, 4.5V | ±8V | |||
|
VIEW |
1,037
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 20V 1.8A ES6 | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 (1.6x1.6) | 500mW (Ta) | P-Channel | 20V | 1.8A (Ta) | 136 mOhm @ 1A, 2.5V | 1V @ 1mA | 10.6nC @ 4V | 568pF @ 10V | 1.5V, 2.5V | ±8V | |||
|
VIEW |
1,521
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 20V 1.8A UFM | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | UFM | 500mW (Ta) | P-Channel | 20V | 1.8A (Ta) | 149 mOhm @ 600mA, 4V | 1V @ 1mA | 7.7nC @ 4V | 331pF @ 10V | 1.5V, 4V | ±8V | |||
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|
VIEW |
2,855
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 20V 1.8A UFM | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | UFM | 500mW (Ta) | P-Channel | 20V | 1.8A (Ta) | 149 mOhm @ 600mA, 4V | 1V @ 1mA | 7.7nC @ 4V | 331pF @ 10V | 1.5V, 4V | ±8V | |||
