- Manufacture :
- Series :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
4 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
3,468
In-stock
|
ON Semiconductor | MOSFET P-CH 12V 2A MCPH3 | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | SC-70FL/MCPH3 | 800mW (Ta) | P-Channel | - | 12V | 2A (Ta) | 198 mOhm @ 1A, 4.5V | 900mV @ 1mA | 2.3nC @ 4.5V | 170pF @ 6V | 1.8V, 4.5V | ±9V | |||
|
VIEW |
2,401
In-stock
|
ON Semiconductor | MOSFET P-CH 30V 2A SOT563 | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-563/SCH6 | 800mW (Ta) | P-Channel | - | 30V | 2A (Ta) | 150 mOhm @ 1A, 10V | 2.6V @ 1mA | 3.9nC @ 10V | 172pF @ 10V | 4V, 10V | ±20V | |||
|
VIEW |
1,542
In-stock
|
ON Semiconductor | MOSFET P-CH 30V 2A MCPH6 | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | SC-88FL/MCPH6 | 800mW (Ta) | P-Channel | - | 30V | 2A (Ta) | 150 mOhm @ 1A, 10V | 2.6V @ 1mA | 3.9nC @ 10V | 172pF @ 10V | 4V, 10V | ±20V | |||
|
VIEW |
3,874
In-stock
|
Infineon Technologies | MOSFET P-CH 30V 2A MICRO8 | FETKY™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Micro8™ | 1.25W (Ta) | P-Channel | Schottky Diode (Isolated) | 30V | 2A (Ta) | 200 mOhm @ 1.2A, 10V | 1V @ 250µA | 11nC @ 10V | 180pF @ 25V | 4.5V, 10V | ±20V | |||
