Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
SI5463EDC-T1-E3
RFQ
VIEW
RFQ
2,746
In-stock
Vishay Siliconix MOSFET P-CH 20V 3.8A 1206-8 - Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SMD, Flat Lead 1206-8 ChipFET™ 1.25W (Ta) P-Channel 20V 3.8A (Ta) 62 mOhm @ 4A, 4.5V 450mV @ 250µA (Min) 15nC @ 4.5V - 1.8V, 4.5V ±12V
ZXMP10A18K
RFQ
VIEW
RFQ
1,072
In-stock
Diodes Incorporated MOSFET P-CH 100V 3.8A DPAK - Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3 2.17W (Ta) P-Channel 100V 3.8A (Ta) 150 mOhm @ 2.8A, 10V 4V @ 250µA 26.9nC @ 10V 1055pF @ 50V 6V, 10V ±20V