- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
2,603
In-stock
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Vishay Siliconix | MOSFET P-CH 8V 5.4A SOT23-3 | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -50°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) | 960mW (Ta), 1.7W (Tc) | P-Channel | - | 8V | 5.4A (Tc) | 40 mOhm @ 4.1A, 4.5V | 800mV @ 250µA | 15nC @ 4.5V | 740pF @ 4V | 1.8V, 4.5V | ±8V | |||
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|
VIEW |
2,125
In-stock
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Vishay Siliconix | MOSFET P-CH 8V 5.4A SOT23-3 | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -50°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) | 960mW (Ta), 1.7W (Tc) | P-Channel | - | 8V | 5.4A (Tc) | 40 mOhm @ 4.1A, 4.5V | 800mV @ 250µA | 15nC @ 4.5V | 740pF @ 4V | 1.8V, 4.5V | ±8V | |||
|
VIEW |
3,062
In-stock
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Vishay Siliconix | MOSFET P-CH 20V 16A 1212-8 | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -50°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 | 3.8W (Ta), 52W (Tc) | P-Channel | - | 20V | 16A (Tc) | 19.2 mOhm @ 11A, 4.5V | 1.6V @ 250µA | 27nC @ 5V | 1870pF @ 10V | 2.5V, 4.5V | ±12V | |||
