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- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
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2 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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2,307
In-stock
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Infineon Technologies | MOSFET P-CH 60V 620MA SC-59-3 | SIPMOS® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | PG-SC-59 | 500mW (Ta) | P-Channel | - | 60V | 620mA (Ta) | 800 mOhm @ 620mA, 10V | 2V @ 160µA | 6nC @ 10V | 176pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
3,455
In-stock
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Infineon Technologies | MOSFET P-CH 60V 1.17A SOT-223 | SIPMOS® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | P-Channel | - | 60V | 1.17A (Ta) | 800 mOhm @ 1.17A, 10V | 2V @ 160µA | 7.8nC @ 10V | 160pF @ 25V | 4.5V, 10V | ±20V | |||
