- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
2 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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1,388
In-stock
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Vishay Siliconix | MOSFET P-CH 20V 35A 1212-8 PPAK | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -50°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | 3.8W (Ta), 52.1W (Tc) | P-Channel | - | 20V | 35A (Tc) | 8.7 mOhm @ 17A, 10V | 2.2V @ 250µA | 87nC @ 10V | 2620pF @ 10V | 4.5V, 10V | ±16V | |||
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VIEW |
1,727
In-stock
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Vishay Siliconix | MOSFET P-CH 30V 35A 1212-8 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -50°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | 3.8W (Ta), 52.1W (Tc) | P-Channel | - | 30V | 35A (Tc) | 11.4 mOhm @ 14.4A, 10V | 2.8V @ 250µA | 71nC @ 10V | 3345pF @ 15V | 4.5V, 10V | ±20V |