- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
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7 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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3,505
In-stock
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Infineon Technologies | MOSFET P-CH 60V 18.6A TO252-3 | SIPMOS® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 80W (Tc) | P-Channel | - | 60V | 18.6A (Tc) | 130 mOhm @ 13.2A, 10V | 4V @ 1mA | 33nC @ 10V | 860pF @ 25V | 10V | ±20V | |||
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VIEW |
2,962
In-stock
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Infineon Technologies | MOSFET P-CH 60V 2.9A SOT-223 | SIPMOS® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | P-Channel | - | 60V | 2.9A (Ta) | 130 mOhm @ 2.9A, 10V | 4V @ 1mA | 33nC @ 10V | 875pF @ 25V | 10V | ±20V | |||
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1,750
In-stock
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Infineon Technologies | MOSFET P-CH 60V 30A TO252-3 | SIPMOS® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 125W (Tc) | P-Channel | - | 60V | 30A (Tc) | 75 mOhm @ 21.5A, 10V | 4V @ 1.7mA | 48nC @ 10V | 1535pF @ 25V | 10V | ±20V | |||
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VIEW |
1,886
In-stock
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Infineon Technologies | MOSFET P-CH 60V 80A TO-263 | SIPMOS® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 340W (Tc) | P-Channel | - | 60V | 80A (Tc) | 23 mOhm @ 64A, 10V | 4V @ 5.5mA | 173nC @ 10V | 5033pF @ 25V | 10V | ±20V | |||
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VIEW |
3,120
In-stock
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Infineon Technologies | MOSFET P-CH 60V 3.44A 8DSO | SIPMOS® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | PG-DSO-8 | 2.5W (Ta) | P-Channel | - | 60V | 3.44A (Ta) | 130 mOhm @ 3.44A, 10V | 4V @ 1mA | 30nC @ 10V | 875pF @ 25V | 10V | ±20V | |||
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3,598
In-stock
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Infineon Technologies | MOSFET P-CH 60V 18.7A TO-263 | SIPMOS® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 81.1W (Ta) | P-Channel | - | 60V | 18.7A (Ta) | 130 mOhm @ 13.2A, 10V | 4V @ 1mA | 28nC @ 10V | 860pF @ 25V | 10V | ±20V | |||
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VIEW |
2,107
In-stock
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Infineon Technologies | MOSFET P-CH 60V 1.9A SOT223 | SIPMOS® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | P-Channel | - | 60V | 1.9A (Ta) | 300 mOhm @ 1.9A, 10V | 4V @ 250µA | 14nC @ 10V | 410pF @ 25V | 10V | ±20V | |||
