Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SSM3J355R,LF
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RFQ
1,447
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Toshiba Semiconductor and Storage SMALL LOW ON RESISTANCE MOSFET U-MOSVII Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-23-3 Flat Leads SOT-23F 1W (Ta) P-Channel - 20V 6A (Ta) 30.1 mOhm @ 4A, 4.5V 1V @ 1mA 16.6nC @ 4.5V 1030pF @ 10V 1.8V, 4.5V ±10V
SSM3J338R,LF
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RFQ
2,490
In-stock
Toshiba Semiconductor and Storage MOSFET P-CH 12V 6A SOT23F U-MOSVII Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-23-3 Flat Leads SOT-23F 1W (Ta) P-Channel - 12V 6A (Ta) 17.6 mOhm @ 6A, 8V 1V @ 1mA 19.5nC @ 4.5V 1400pF @ 6V 1.8V, 8V ±10V
ZXMP2120FFTA
RFQ
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RFQ
3,444
In-stock
Diodes Incorporated MOSFET P-CH 200V SOT23F-3 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-3 Flat Leads SOT-23F 1W (Ta) P-Channel - 200V 137mA (Ta) 28 Ohm @ 150mA, 10V 3.5V @ 250µA - 100pF @ 25V 10V ±20V
SSM3J328R,LF
RFQ
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RFQ
1,851
In-stock
Toshiba Semiconductor and Storage MOSFET P-CH 20V 6A SOT23F U-MOSVI Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-23-3 Flat Leads SOT-23F 1W (Ta) P-Channel - 20V 6A (Ta) 29.8 mOhm @ 3A, 4.5V 1V @ 1mA 12.8nC @ 4.5V 840pF @ 10V 1.5V, 4.5V ±8V
SSM3J331R,LF
RFQ
VIEW
RFQ
3,375
In-stock
Toshiba Semiconductor and Storage MOSFET P CH 20V 4A SOT-23F U-MOSVI Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-23-3 Flat Leads SOT-23F 1W (Ta) P-Channel - 20V 4A (Ta) 55 mOhm @ 3A, 4.5V 1V @ 1mA 10.4nC @ 4.5V 630pF @ 10V 1.5V, 4.5V ±8V
SSM3J334R,LF
RFQ
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RFQ
1,788
In-stock
Toshiba Semiconductor and Storage MOSFET P CH 30V 4A SOT-23F U-MOSVI Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-23-3 Flat Leads SOT-23F 1W (Ta) P-Channel - 30V 4A (Ta) 71 mOhm @ 3A, 10V 2V @ 100µA 5.9nC @ 10V 280pF @ 15V 4V, 10V ±20V
SSM3J332R,LF
RFQ
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RFQ
1,116
In-stock
Toshiba Semiconductor and Storage MOSFET P CH 30V 6A 2-3Z1A U-MOSVI Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-23-3 Flat Leads SOT-23F 1W (Ta) P-Channel - 30V 6A (Ta) 42 mOhm @ 5A, 10V 1.2V @ 1mA 8.2nC @ 4.5V 560pF @ 15V 1.8V, 10V ±12V
SSM3J327R,LF
RFQ
VIEW
RFQ
2,868
In-stock
Toshiba Semiconductor and Storage MOSFET P-CH 20V 6A SOT23F U-MOSVI Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-23-3 Flat Leads SOT-23F 1W (Ta) P-Channel - 20V 3.9A (Ta) 93 mOhm @ 1.5A, 4.5V 1V @ 1mA 4.6nC @ 4.5V 290pF @ 10V 1.5V, 4.5V ±8V
SSM3J356R,LF
RFQ
VIEW
RFQ
1,067
In-stock
Toshiba Semiconductor and Storage MOSFET P-CH 60V 2A SOT23F U-MOSVI Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-23-3 Flat Leads SOT-23F 1W (Ta) P-Channel - 60V 2A (Ta) 300 mOhm @ 1A, 10V 2V @ 1mA 8.3nC @ 10V 330pF @ 10V 4V, 10V +10V, -20V
SSM3J358R,LF
RFQ
VIEW
RFQ
2,455
In-stock
Toshiba Semiconductor and Storage SMALL LOW ON RESISTANCE MOSFET U-MOSVII Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-23-3 Flat Leads SOT-23F 1W (Ta) P-Channel - 20V 6A (Ta) 22.1 mOhm @ 6A, 8V 1V @ 1mA 38.5nC @ 8V 1331pF @ 10V 1.8V, 8V ±10V
SSM3J351R,LF
RFQ
VIEW
RFQ
2,472
In-stock
Toshiba Semiconductor and Storage MOSFET P-CH 60V 3.5A SOT23F U-MOSVI Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C Surface Mount SOT-23-3 Flat Leads SOT-23F 2W (Ta) P-Channel - 60V 3.5A (Ta) 134 mOhm @ 1A, 10V 2V @ 1mA 15.1nC @ 10V 660pF @ 10V 4V, 10V +10V, -20V