- Series :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
2 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
3,575
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CHANNEL 20V 100MA CST3 | π-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C | Surface Mount | SC-101, SOT-883 | CST3 | 100mW (Ta) | P-Channel | - | 20V | 100mA (Ta) | 8 Ohm @ 50mA, 4V | 1V @ 1mA | - | 12.2pF @ 3V | 1.2V, 4V | ±10V | |||
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|
VIEW |
3,059
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 20V 1.4A CST3 | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C | Surface Mount | SC-101, SOT-883 | CST3 | 500mW (Ta) | P-Channel | - | 20V | 1.4A (Ta) | 390 mOhm @ 800mA, 4.5V | 1V @ 1mA | 1.6nC @ 4.5V | 100pF @ 10V | 1.2V, 4.5V | ±8V | |||
