Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Infineon Technologies MOSFET P-CH 30V 11A 8PQFN HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN 8-PQFN (3.3x3.3), Power33 2.6W (Ta) P-Channel - 30V 11A (Ta) 14.6 mOhm @ 11A, 10V 2.4V @ 25µA 16nC @ 10V 1543pF @ 25V 4.5V, 10V ±25V
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ON Semiconductor MOSFET P-CH 20V POWER33 PowerTrench® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerWDFN 8-PQFN (3.3x3.3), Power33 2.3W (Ta), 30W (Tc) P-Channel - 20V 14A (Ta), 56A (Tc) 6.5 mOhm @ 14A, 4.5V 1V @ 250µA 61nC @ 4.5V 7435pF @ 10V 1.8V, 4.5V ±8V
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ON Semiconductor MOSFET P-CH 20V POWER33 PowerTrench® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerWDFN 8-PQFN (3.3x3.3), Power33 2.3W (Ta), 40W (Tc) P-Channel - 20V 18A (Ta), 56A (Tc) 4 mOhm @ 18A, 4.5V 1V @ 250µA 122nC @ 4.5V 13200pF @ 10V 1.8V, 4.5V ±8V