Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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NTR4501NT1
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3,578
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ON Semiconductor MOSFET N-CH 20V 3.2A SOT-23 - Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 1.25W (Tj) N-Channel - 20V 3.2A (Ta) 80 mOhm @ 3.6A, 4.5V 1.2V @ 250µA 6nC @ 4.5V 200pF @ 10V 1.8V, 4.5V ±12V
SI2336DS-T1-GE3
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1,032
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Vishay Siliconix MOSFET N-CH 30V 5.2A SOT-23 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 1.25W (Ta), 1.8W (Tc) N-Channel - 30V 5.2A (Tc) 42 mOhm @ 3.8A, 4.5V 1V @ 250µA 15nC @ 8V 560pF @ 15V 1.8V, 4.5V ±8V
SI2312BDS-T1-E3
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RFQ
3,222
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Vishay Siliconix MOSFET N-CH 20V 3.9A SOT23-3 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 750mW (Ta) N-Channel - 20V 3.9A (Ta) 31 mOhm @ 5A, 4.5V 850mV @ 250µA 12nC @ 4.5V - 1.8V, 4.5V ±8V
SI2312BDS-T1-GE3
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RFQ
1,645
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Vishay Siliconix MOSFET N-CH 20V 3.9A SOT23-3 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 750mW (Ta) N-Channel - 20V 3.9A (Ta) 31 mOhm @ 5A, 4.5V 850mV @ 250µA 12nC @ 4.5V - 1.8V, 4.5V ±8V
SI2312CDS-T1-GE3
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RFQ
3,765
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Vishay Siliconix MOSFET N-CH 20V 6A SOT-23 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 1.25W (Ta), 2.1W (Tc) N-Channel - 20V 6A (Tc) 31.8 mOhm @ 5A, 4.5V 1V @ 250µA 18nC @ 5V 865pF @ 10V 1.8V, 4.5V ±8V
SI2314EDS-T1-E3
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RFQ
1,946
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Vishay Siliconix MOSFET N-CH 20V 3.77A SOT23-3 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 750mW (Ta) N-Channel - 20V 3.77A (Ta) 33 mOhm @ 5A, 4.5V 950mV @ 250µA 14nC @ 4.5V - 1.8V, 4.5V ±12V
NTR4501NT1G
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RFQ
1,346
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ON Semiconductor MOSFET N-CH 20V 3.2A SOT-23 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 1.25W (Tj) N-Channel - 20V 3.2A (Ta) 80 mOhm @ 3.6A, 4.5V 1.2V @ 250µA 6nC @ 4.5V 200pF @ 10V 1.8V, 4.5V ±12V
SI2374DS-T1-GE3
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RFQ
3,580
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Vishay Siliconix MOSFET N-CHAN 20V SOT23 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 960mW (Ta), 1.7W (Tc) N-Channel - 20V 4.5A (Ta), 5.9A (Tc) 30 mOhm @ 4A, 4.5V 1V @ 250µA 20nC @ 10V 735pF @ 10V 1.8V, 4.5V ±8V