Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
SI2392DS-T1-GE3
RFQ
VIEW
RFQ
1,597
In-stock
Vishay Siliconix MOSFET N-CH 100V 3.1A SOT-23 TrenchFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23 1.25W (Ta), 2.5W (Tc) N-Channel - 100V 3.1A (Tc) 126 mOhm @ 2A, 10V 3V @ 250µA 10.4nC @ 10V 196pF @ 50V 4.5V, 10V ±20V
SI2319CDS-T1-GE3
RFQ
VIEW
RFQ
1,475
In-stock
Vishay Siliconix MOSFET P-CH 40V 4.4A SOT-23 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 1.25W (Ta), 2.5W (Tc) P-Channel - 40V 4.4A (Tc) 77 mOhm @ 3.1A, 10V 2.5V @ 250µA 21nC @ 10V 595pF @ 20V 4.5V, 10V ±20V
SI2369DS-T1-GE3
RFQ
VIEW
RFQ
1,258
In-stock
Vishay Siliconix MOSFET P-CH 30V 7.6A TO-236 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 TO-236 1.25W (Ta), 2.5W (Tc) P-Channel - 30V 7.6A (Tc) 29 mOhm @ 5.4A, 10V 2.5V @ 250µA 36nC @ 10V 1295pF @ 15V 4.5V, 10V ±20V
SI2343CDS-T1-GE3
RFQ
VIEW
RFQ
3,955
In-stock
Vishay Siliconix MOSFET P-CH 30V 5.9A SOT-23 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 1.25W (Ta), 2.5W (Tc) P-Channel - 30V 5.9A (Tc) 45 mOhm @ 4.2A, 10V 2.5V @ 250µA 21nC @ 10V 590pF @ 15V 4.5V, 10V ±20V
SI2324DS-T1-GE3
RFQ
VIEW
RFQ
3,345
In-stock
Vishay Siliconix MOSFET N-CH 100V 2.3A SOT-23 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 - 1.25W (Ta), 2.5W (Tc) N-Channel - 100V 2.3A (Tc) 234 mOhm @ 1.5A, 10V 2.9V @ 250µA 10.4nC @ 10V 190pF @ 50V 10V ±20V
SI2323CDS-T1-GE3
RFQ
VIEW
RFQ
3,032
In-stock
Vishay Siliconix MOSFET P-CH 20V 6A SOT-23 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 1.25W (Ta), 2.5W (Tc) P-Channel - 20V 6A (Tc) 39 mOhm @ 4.6A, 4.5V 1V @ 250µA 25nC @ 4.5V 1090pF @ 10V 1.8V, 4.5V ±8V
SI2333CDS-T1-GE3
RFQ
VIEW
RFQ
3,416
In-stock
Vishay Siliconix MOSFET P-CH 12V 7.1A SOT-23 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 1.25W (Ta), 2.5W (Tc) P-Channel - 12V 7.1A (Tc) 35 mOhm @ 5.1A, 4.5V 1V @ 250µA 25nC @ 4.5V 1225pF @ 6V 1.8V, 4.5V ±8V
SI2333CDS-T1-E3
RFQ
VIEW
RFQ
3,603
In-stock
Vishay Siliconix MOSFET P-CH 12V 7.1A SOT23-3 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 1.25W (Ta), 2.5W (Tc) P-Channel - 12V 7.1A (Tc) 35 mOhm @ 5.1A, 4.5V 1V @ 250µA 25nC @ 4.5V 1225pF @ 6V 1.8V, 4.5V ±8V
SI2392ADS-T1-GE3
RFQ
VIEW
RFQ
1,351
In-stock
Vishay Siliconix MOSFET N-CH 100V 3.1A SOT-23 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 1.25W (Ta), 2.5W (Tc) N-Channel - 100V 3.1A (Tc) 126 mOhm @ 2A, 10V 3V @ 250µA 10.4nC @ 10V 196pF @ 50V 4.5V, 10V ±20V