- Operating Temperature :
- Supplier Device Package :
- FET Type :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Vgs (Max) :
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8 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
3,472
In-stock
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Infineon Technologies | MOSFET N-CH 200V 5A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 43W (Tc) | N-Channel | - | 200V | 5A (Tc) | 600 mOhm @ 2.9A, 10V | 4V @ 250µA | 23nC @ 10V | 300pF @ 25V | 10V | ±20V | |||
|
VIEW |
3,588
In-stock
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Vishay Siliconix | MOSFET N-CH 100V 5.6A D2PAK | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | 43W (Tc) | N-Channel | - | 100V | 5.6A (Tc) | 540 mOhm @ 3.4A, 10V | 4V @ 250µA | 8.3nC @ 10V | 180pF @ 25V | 10V | ±20V | |||
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VIEW |
1,518
In-stock
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Nexperia USA Inc. | PSMN6R0-25YLD/LFPAK/REEL 7 Q1 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK56, Power-SO8 | 43W (Tc) | N-Channel | Schottky Diode (Body) | 25V | 61A (Tc) | 6.75 mOhm @ 15A, 10V | 2.2V @ 1mA | 10.5nC @ 10V | 705pF @ 12V | 4.5V, 10V | ±20V | |||
|
VIEW |
2,659
In-stock
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Infineon Technologies | MOSFET N-CH 700V 8.5A TO252-3 | CoolMOS™ P7 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 43W (Tc) | N-Channel | - | 700V | 8.5A (Tc) | 600 mOhm @ 1.8A, 10V | 3.5V @ 90µA | 10.5nC @ 10V | 364pF @ 400V | 10V | ±16V | |||
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VIEW |
1,041
In-stock
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Vishay Siliconix | MOSFET P-CH 100V 4A D2PAK | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | 43W (Tc) | P-Channel | - | 100V | 4A (Tc) | 1.2 Ohm @ 2.4A, 10V | 4V @ 250µA | 8.7nC @ 10V | 200pF @ 25V | 10V | ±20V | |||
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VIEW |
3,354
In-stock
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ON Semiconductor | MOSFET N-CH 200V 5A D-PAK | UniFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 43W (Tc) | N-Channel | - | 200V | 5A (Tc) | 690 mOhm @ 2.5A, 10V | 5V @ 250µA | 6.7nC @ 10V | 250pF @ 25V | 10V | ±30V | |||
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VIEW |
2,422
In-stock
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Vishay Siliconix | MOSFET N-CH 30V 60A POWERPAKSO-8 | TrenchFET® Gen IV | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 43W (Tc) | N-Channel | Schottky Diode (Isolated) | 30V | 60A (Tc) | 3.5 mOhm @ 10A, 10V | 2.4V @ 250µA | 36nC @ 10V | 1873pF @ 15V | 4.5V, 10V | +20V, -16V | |||
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|
VIEW |
2,448
In-stock
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Infineon Technologies | MOSFET N-CH 200V 5A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 43W (Tc) | N-Channel | - | 200V | 5A (Tc) | 600 mOhm @ 2.9A, 10V | 4V @ 250µA | 23nC @ 10V | 300pF @ 25V | 10V | ±20V | |||
