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- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
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7 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
3,664
In-stock
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Infineon Technologies | MOSFET N-CH 20V 4.2A SOT-23 | HEXFET® | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | Micro3™/SOT-23 | 1.25W (Ta) | N-Channel | - | 20V | 4.2A (Ta) | 45 mOhm @ 4.2A, 4.5V | 1.2V @ 250µA | 12nC @ 5V | 740pF @ 15V | 2.7V, 4.5V | ±12V | |||
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VIEW |
3,326
In-stock
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Infineon Technologies | MOSFET N-CH 25V 5.8A SOT23 | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | 1.25W (Ta) | N-Channel | - | 25V | 5.8A (Ta) | 24 mOhm @ 5.8A, 10V | 2.35V @ 10µA | 5.4nC @ 10V | 430pF @ 10V | 4.5V, 10V | ±20V | |||
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VIEW |
1,390
In-stock
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Infineon Technologies | MOSFET N-CH 60V 1.2A SOT23-3 | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | Micro3™/SOT-23 | 1.25W (Ta) | N-Channel | - | 60V | 1.2A (Ta) | 480 mOhm @ 1.2A, 10V | 2.5V @ 25µA | 0.67nC @ 4.5V | 64pF @ 25V | 4.5V, 10V | ±16V | |||
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VIEW |
1,363
In-stock
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Infineon Technologies | MOSFET P-CH 30V 3A SOT-23 | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | Micro3™/SOT-23 | 1.25W (Ta) | P-Channel | - | 30V | 3A (Ta) | 98 mOhm @ 3A, 10V | 2.5V @ 250µA | 14nC @ 10V | 510pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
1,172
In-stock
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Infineon Technologies | MOSFET N-CH 20V 4.2A SOT-23 | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | Micro3™/SOT-23 | 1.25W (Ta) | N-Channel | - | 20V | 4.2A (Ta) | 45 mOhm @ 4.2A, 4.5V | 1.2V @ 250µA | 12nC @ 5V | 740pF @ 15V | 2.5V, 4.5V | ±12V | |||
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VIEW |
1,296
In-stock
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Infineon Technologies | MOSFET P-CH 30V 2.3A SOT-23-3 | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | Micro3™/SOT-23 | 1.25W (Ta) | P-Channel | - | 30V | 2.3A (Ta) | 165 mOhm @ 2.3A, 10V | 2.4V @ 10µA | 2nC @ 4.5V | 160pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
2,134
In-stock
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Infineon Technologies | MOSFET N-CH 60V 2.7A SOT-23-3 | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | Micro3™/SOT-23 | 1.25W (Ta) | N-Channel | - | 60V | 2.7A (Ta) | 92 mOhm @ 2.7A, 10V | 2.5V @ 25µA | 2.5nC @ 4.5V | 290pF @ 25V | 4.5V, 10V | ±16V |