Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SI2323DS-T1-E3
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RFQ
3,859
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Vishay Siliconix MOSFET P-CH 20V 3.7A SOT23-3 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 750mW (Ta) P-Channel - 20V 3.7A (Ta) 39 mOhm @ 4.7A, 4.5V 1V @ 250µA 19nC @ 4.5V 1020pF @ 10V 1.8V, 4.5V ±8V
TSM2312CX RFG
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3,371
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Taiwan Semiconductor Corporation MOSFET N-CHANNEL 20V 4.9A SOT23 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23 750mW (Ta) N-Channel - 20V 4.9A (Tc) 33 mOhm @ 4.9A, 4.5V 1V @ 250µA 11.2nC @ 4.5V 500pF @ 10V 1.8V, 4.5V ±8V
CSD25304W1015
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RFQ
1,209
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Texas Instruments MOSFET P-CH 20V 3A 6DSBGA NexFET™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-UFBGA, DSBGA 6-DSBGA 750mW (Ta) P-Channel - 20V 3A (Ta) 32.5 mOhm @ 1.5A, 4.5V 1.15V @ 250µA 4.4nC @ 4.5V 595pF @ 10V 1.8V, 4.5V ±8V
FDG312P
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RFQ
881
In-stock
ON Semiconductor MOSFET P-CH 20V 1.2A SC70-6 PowerTrench® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-TSSOP, SC-88, SOT-363 SC-70-6 750mW (Ta) P-Channel - 20V 1.2A (Ta) 180 mOhm @ 1.2A, 4.5V 1.5V @ 250µA 5nC @ 4.5V 330pF @ 10V 2.5V, 4.5V ±8V
SI2315BDS-T1-E3
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RFQ
1,603
In-stock
Vishay Siliconix MOSFET P-CH 12V 3A SOT23-3 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 750mW (Ta) P-Channel - 12V 3A (Ta) 50 mOhm @ 3.85A, 4.5V 900mV @ 250µA 15nC @ 4.5V 715pF @ 6V 1.8V, 4.5V ±8V
SI2333DS-T1-GE3
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RFQ
810
In-stock
Vishay Siliconix MOSFET P-CH 12V 4.1A SOT23-3 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 750mW (Ta) P-Channel - 12V 4.1A (Ta) 32 mOhm @ 5.3A, 4.5V 1V @ 250µA 18nC @ 4.5V 1100pF @ 6V 1.8V, 4.5V ±8V
CSD25304W1015T
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RFQ
1,226
In-stock
Texas Instruments MOSFET P-CH 20V 3A 6DSBGA NexFET™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-UFBGA, DSBGA 6-DSBGA 750mW (Ta) P-Channel - 20V 3A (Ta) 32.5 mOhm @ 1.5A, 4.5V 1.15V @ 250µA 4.4nC @ 4.5V 595pF @ 10V 1.8V, 4.5V ±8V
SI2312BDS-T1-E3
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RFQ
3,222
In-stock
Vishay Siliconix MOSFET N-CH 20V 3.9A SOT23-3 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 750mW (Ta) N-Channel - 20V 3.9A (Ta) 31 mOhm @ 5A, 4.5V 850mV @ 250µA 12nC @ 4.5V - 1.8V, 4.5V ±8V
SI2312BDS-T1-GE3
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RFQ
1,645
In-stock
Vishay Siliconix MOSFET N-CH 20V 3.9A SOT23-3 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 750mW (Ta) N-Channel - 20V 3.9A (Ta) 31 mOhm @ 5A, 4.5V 850mV @ 250µA 12nC @ 4.5V - 1.8V, 4.5V ±8V
FDG332PZ
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RFQ
3,739
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ON Semiconductor MOSFET P-CH 20V 2.6A SC70-6 PowerTrench® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-TSSOP, SC-88, SOT-363 SC-70-6 750mW (Ta) P-Channel - 20V 2.6A (Ta) 95 mOhm @ 2.6A, 4.5V 1.5V @ 250µA 10.8nC @ 4.5V 560pF @ 10V 1.8V, 4.5V ±8V
FDG311N
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RFQ
3,042
In-stock
ON Semiconductor MOSFET N-CH 20V 1.9A SC70-6 PowerTrench® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-TSSOP, SC-88, SOT-363 SC-70-6 750mW (Ta) N-Channel - 20V 1.9A (Ta) 115 mOhm @ 1.9A, 4.5V 1.5V @ 250µA 4.5nC @ 4.5V 270pF @ 10V 2.5V, 4.5V ±8V
SI2315BDS-T1-GE3
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RFQ
3,270
In-stock
Vishay Siliconix MOSFET P-CH 12V 3A SOT23-3 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 - 750mW (Ta) P-Channel - 12V 3A (Ta) 50 mOhm @ 3.85A, 4.5V 900mV @ 250µA 15nC @ 4.5V 715pF @ 6V 4.5V ±8V
SI2333DS-T1-E3
RFQ
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RFQ
1,256
In-stock
Vishay Siliconix MOSFET P-CH 12V 4.1A SOT23-3 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 750mW (Ta) P-Channel - 12V 4.1A (Ta) 32 mOhm @ 5.3A, 4.5V 1V @ 250µA 18nC @ 4.5V 1100pF @ 6V 1.8V, 4.5V ±8V