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- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
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2 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
2,773
In-stock
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Rohm Semiconductor | MOSFET N-CH 45V 2A TSMT3 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-96 | TSMT3 | 1W (Ta) | N-Channel | - | 45V | 2A (Ta) | 180 mOhm @ 2A, 4.5V | 1.5V @ 1mA | 4.1nC @ 4.5V | 200pF @ 10V | 2.5V, 4.5V | ±12V | |||
|
VIEW |
3,442
In-stock
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Texas Instruments | MOSFET P-CH 20V 3.2A 6DSBGA | NexFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UFBGA, DSBGA | 6-DSBGA (1x1.5) | 1W (Ta) | P-Channel | - | 20V | 3.2A (Ta) | 33 mOhm @ 1.5A, 4.5V | 1.1V @ 250µA | 4.1nC @ 4.5V | 570pF @ 10V | 2.5V, 4.5V | -6V | |||
