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- Series :
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- Package / Case :
- Supplier Device Package :
- Rds On (Max) @ Id, Vgs :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
832
In-stock
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Vishay Siliconix | MOSFET N-CH 20V 3.1A SC-70-6 | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SC-70-6 (SOT-363) | 1W (Ta) | N-Channel | - | 20V | 3.1A (Ta) | 65 mOhm @ 3.9A, 4.5V | 1.2V @ 250µA | 7.5nC @ 4.5V | - | 1.8V, 4.5V | ±8V | |||
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|
VIEW |
3,438
In-stock
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Vishay Siliconix | MOSFET N-CH 20V 3.1A SC70-6 | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SC-70-6 (SOT-363) | 1W (Ta) | N-Channel | - | 20V | 3.1A (Ta) | 65 mOhm @ 3.9A, 4.5V | 1.2V @ 250µA | 7.5nC @ 4.5V | - | 1.8V, 4.5V | ±8V | |||
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VIEW |
1,985
In-stock
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Infineon Technologies | MOSFET N-CH 55V 3.1A SOT223 | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | - | 55V | 3.1A (Ta) | 65 mOhm @ 3.1A, 10V | 2V @ 250µA | 15.6nC @ 5V | 510pF @ 25V | 4V, 10V | ±16V | |||
