Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SSM3J355R,LF
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1,447
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Toshiba Semiconductor and Storage SMALL LOW ON RESISTANCE MOSFET U-MOSVII Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-23-3 Flat Leads SOT-23F 1W (Ta) P-Channel - 20V 6A (Ta) 30.1 mOhm @ 4A, 4.5V 1V @ 1mA 16.6nC @ 4.5V 1030pF @ 10V 1.8V, 4.5V ±10V
SSM6J414TU,LF
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727
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Toshiba Semiconductor and Storage MOSFET P CH 20V 6A UF6 U-MOSVI Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 6-SMD, Flat Leads UF6 1W (Ta) P-Channel - 20V 6A (Ta) 22.5 mOhm @ 6A, 4.5V 1V @ 1mA 23.1nC @ 4.5V 1650pF @ 10V 1.5V, 4.5V ±8V
SSM3J338R,LF
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2,490
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Toshiba Semiconductor and Storage MOSFET P-CH 12V 6A SOT23F U-MOSVII Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-23-3 Flat Leads SOT-23F 1W (Ta) P-Channel - 12V 6A (Ta) 17.6 mOhm @ 6A, 8V 1V @ 1mA 19.5nC @ 4.5V 1400pF @ 6V 1.8V, 8V ±10V
SSM6J502NU,LF(T
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RFQ
1,380
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Toshiba Semiconductor and Storage MOSFET P CH 20V 6A 2-2AA1A U-MOSVI Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 6-WDFN Exposed Pad 6-UDFNB (2x2) 1W (Ta) P-Channel - 20V 6A (Ta) 23.1 mOhm @ 4A, 4.5V 1V @ 1mA 24.8nC @ 4.5V 1800pF @ 10V 1.5V, 4.5V ±8V
SSM6J503NU,LF(T
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RFQ
702
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Toshiba Semiconductor and Storage MOSFET P CH 20V 6A 2-2AA1A U-MOSVI Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 6-WDFN Exposed Pad 6-UDFNB (2x2) 1W (Ta) P-Channel - 20V 6A (Ta) 32.4 mOhm @ 3A, 4.5V 1V @ 1mA 12.8nC @ 10V 840pF @ 10V 1.5V, 4.5V ±8V
SSM3J328R,LF
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RFQ
1,851
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Toshiba Semiconductor and Storage MOSFET P-CH 20V 6A SOT23F U-MOSVI Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-23-3 Flat Leads SOT-23F 1W (Ta) P-Channel - 20V 6A (Ta) 29.8 mOhm @ 3A, 4.5V 1V @ 1mA 12.8nC @ 4.5V 840pF @ 10V 1.5V, 4.5V ±8V
SSM3K335R,LF
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RFQ
2,360
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Toshiba Semiconductor and Storage MOSFET N CH 30V 6A SOT-23F U-MOSVII-H Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-23-3 Flat Leads SOT-23F 1W (Ta) N-Channel - 30V 6A (Ta) 38 mOhm @ 4A, 10V 2.5V @ 100µA 2.7nC @ 4.5V 340pF @ 15V 4.5V, 10V ±20V
SSM3K333R,LF
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RFQ
3,281
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Toshiba Semiconductor and Storage MOSFET N CH 30V 6A 2-3Z1A U-MOSVII-H Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-23-3 Flat Leads SOT-23F 1W (Ta) N-Channel - 30V 6A (Ta) 28 mOhm @ 5A, 10V 2.5V @ 100µA 3.4nC @ 4.5V 436pF @ 15V 4.5V, 10V ±20V
SSM3J332R,LF
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RFQ
1,116
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Toshiba Semiconductor and Storage MOSFET P CH 30V 6A 2-3Z1A U-MOSVI Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-23-3 Flat Leads SOT-23F 1W (Ta) P-Channel - 30V 6A (Ta) 42 mOhm @ 5A, 10V 1.2V @ 1mA 8.2nC @ 4.5V 560pF @ 15V 1.8V, 10V ±12V
SSM3J358R,LF
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RFQ
2,455
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Toshiba Semiconductor and Storage SMALL LOW ON RESISTANCE MOSFET U-MOSVII Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-23-3 Flat Leads SOT-23F 1W (Ta) P-Channel - 20V 6A (Ta) 22.1 mOhm @ 6A, 8V 1V @ 1mA 38.5nC @ 8V 1331pF @ 10V 1.8V, 8V ±10V