Supplier Device Package :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
FDZ3N513ZT
RFQ
VIEW
RFQ
1,548
In-stock
ON Semiconductor MOSFET N-CH 30V WLCSP 1X1 - Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 125°C (TJ) Surface Mount 4-UFBGA, WLCSP 4-WLCSP (1x1) 1W (Ta) N-Channel Schottky Diode (Body) 30V 1.1A (Ta) 462 mOhm @ 300mA, 4.5V 1.5V @ 250µA 1nC @ 4.5V 85pF @ 15V 3.2V, 4.5V +5.5V, -0.3V
DMS3014SFG-7
RFQ
VIEW
RFQ
628
In-stock
Diodes Incorporated MOSFET N-CH 30V 9.5A POWERDI - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerWDFN PowerDI3333-8 1W (Ta) N-Channel Schottky Diode (Body) 30V 9.5A (Ta) 13 mOhm @ 10.4A, 10V 2.2V @ 250µA 45.7nC @ 10V 4310pF @ 15V 1.8V, 4.5V ±12V