Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRLL3303TR
RFQ
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RFQ
2,961
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Infineon Technologies MOSFET N-CH 30V 4.6A SOT223 HEXFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 1W (Ta) N-Channel - 30V 4.6A (Ta) 31 mOhm @ 4.6A, 10V 1V @ 250µA 50nC @ 10V 840pF @ 25V 4.5V, 10V ±16V
IRLL2705TR
RFQ
VIEW
RFQ
3,562
In-stock
Infineon Technologies MOSFET N-CH 55V 3.8A SOT223 HEXFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 1W (Ta) N-Channel - 55V 3.8A (Ta) 40 mOhm @ 3.8A, 10V 2V @ 250µA 48nC @ 10V 870pF @ 25V 4V, 10V ±16V
IRFL4310TR
RFQ
VIEW
RFQ
861
In-stock
Infineon Technologies MOSFET N-CH 100V 1.6A SOT223 HEXFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 1W (Ta) N-Channel - 100V 1.6A (Ta) 200 mOhm @ 1.6A, 10V 4V @ 250µA 25nC @ 10V 330pF @ 25V 10V ±20V
IRFL4105TR
RFQ
VIEW
RFQ
2,287
In-stock
Infineon Technologies MOSFET N-CH 55V 3.7A SOT223 HEXFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 1W (Ta) N-Channel - 55V 3.7A (Ta) 45 mOhm @ 3.7A, 10V 4V @ 250µA 35nC @ 10V 660pF @ 25V 10V ±20V