Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Vishay Siliconix MOSFET P-CHAN 40V SO-8 TrenchFET® Gen III Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta), 5W (Tc) P-Channel - 40V 9.9A (Ta), 14A (Tc) 14.2 mOhm @ 10A, 10V 2.3V @ 250µA 100nC @ 10V 4000pF @ 20V 4.5V, 10V ±20V
SI4487DY-T1-GE3
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3,513
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Vishay Siliconix MOSFET P-CH 30V 11.6A 8-SOIC TrenchFET® Last Time Buy Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta), 5W (Tc) P-Channel - 30V 11.6A (Tc) 20.5 mOhm @ 10A, 10V 2.5V @ 250µA 36nC @ 10V 1075pF @ 15V 4.5V, 10V ±25V
SI4435DDY-T1-E3
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1,250
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Vishay Siliconix MOSFET P-CH 30V 11.4A 8SOIC TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta), 5W (Tc) P-Channel - 30V 11.4A (Tc) 24 mOhm @ 9.1A, 10V 3V @ 250µA 50nC @ 10V 1350pF @ 15V 4.5V, 10V ±20V
SI4435DDY-T1-GE3
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888
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Vishay Siliconix MOSFET P-CH 30V 11.4A 8-SOIC TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta), 5W (Tc) P-Channel - 30V 11.4A (Tc) 24 mOhm @ 9.1A, 10V 3V @ 250µA 50nC @ 10V 1350pF @ 15V 4.5V, 10V ±20V