- Series :
- Operating Temperature :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
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13 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
1,724
In-stock
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ON Semiconductor | MOSFET P-CH 60V .37A | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | SC-70FL/MCPH3 | 600mW (Ta) | P-Channel | 60V | 370mA (Ta) | 4.2 Ohm @ 190mA, 10V | - | 0.84nC @ 10V | 24.1pF @ 20V | 4V, 10V | ±20V | ||||
VIEW |
2,944
In-stock
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ON Semiconductor | MOSFET P-CH 60V 1.8A 6-TSOP | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | 6-TSOP | 600mW (Ta) | P-Channel | 60V | 1.8A (Ta) | 111 mOhm @ 2.9A, 10V | 3V @ 250µA | 18.1nC @ 10V | 942pF @ 30V | 4.5V, 10V | ±20V | ||||
VIEW |
3,603
In-stock
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Toshiba Semiconductor and Storage | X34 PB-F SMALL LOW ON RESISTANE | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C | Surface Mount | TO-236-3, SC-59, SOT-23-3 | S-Mini | 600mW (Ta) | P-Channel | 30V | 2A (Ta) | 150 mOhm @ 2A, 10V | 2.2V @ 250µA | 3.4nC @ 4.5V | 159pF @ 15V | 4V, 10V | +20V, -25V | ||||
VIEW |
2,702
In-stock
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Rohm Semiconductor | MOSFET P-CH 12V 5A TSMT6 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | TSMT6 (SC-95) | 600mW (Ta) | P-Channel | 12V | 5A (Ta) | 26 mOhm @ 5A, 4.5V | 1V @ 1mA | 35nC @ 4.5V | 2850pF @ 6V | 1.5V, 4.5V | ±10V | ||||
VIEW |
1,460
In-stock
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Diodes Incorporated | MOSFET P-CH 250V 0.26A DFN2020-6 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2020-6 (Type E) | 600mW (Ta) | P-Channel | 250V | 260mA (Ta) | 14 Ohm @ 200mA, 10V | 2.5V @ 1mA | 2.8nC @ 10V | 81pF @ 25V | 3.5V, 10V | ±40V | ||||
VIEW |
3,799
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 20V 2A S-MINI | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | S-Mini | 600mW (Ta) | P-Channel | 20V | 2A (Ta) | 150 mOhm @ 1A, 4.5V | - | 4.6nC @ 4.5V | 270pF @ 10V | 1.5V, 4.5V | ±8V | ||||
VIEW |
3,148
In-stock
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ON Semiconductor | MOSFET P-CH 20V 2.6A 6UDFN | µCool™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-PowerUFDFN | 6-UDFN (1.6x1.6) | 600mW (Ta) | P-Channel | 20V | 2.6A (Ta) | 62 mOhm @ 4A, 4.5V | 1V @ 250µA | 12.3nC @ 4.5V | 950pF @ 10V | 1.5V, 4.5V | ±8V | ||||
VIEW |
3,932
In-stock
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Rohm Semiconductor | MOSFET P-CH 12V 6A TSST8 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 8-TSST | 600mW (Ta) | P-Channel | 12V | 6A (Ta) | 19 mOhm @ 6A, 4.5V | 1V @ 1mA | 80nC @ 4.5V | 7800pF @ 6V | 1.5V, 4.5V | -8V | ||||
VIEW |
2,952
In-stock
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ON Semiconductor | MOSFET P-CH 60V 1.8A 6TSOP | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | 6-TSOP | 600mW (Ta) | P-Channel | 60V | 1.8A (Ta) | 111 mOhm @ 2.9A, 10V | 3V @ 250µA | 18.1nC @ 10V | 942pF @ 30V | 4.5V, 10V | ±20V | ||||
VIEW |
3,452
In-stock
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Rohm Semiconductor | MOSFET P-CH 12V 5A TSST8 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 8-TSST | 600mW (Ta) | P-Channel | 12V | 5A (Ta) | 26 mOhm @ 5A, 4.5V | 1V @ 1mA | 34nC @ 4.5V | 2800pF @ 6V | 1.5V, 4.5V | ±10V | ||||
VIEW |
1,024
In-stock
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Rohm Semiconductor | MOSFET P-CH 100V 1.5A TSMT | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | TSMT6 (SC-95) | 600mW (Ta) | P-Channel | 100V | 1.5A (Ta) | 470 mOhm @ 1.5A, 10V | 2.5V @ 1mA | 322nC @ 10V | 950pF @ 25V | 4V, 10V | ±20V | ||||
VIEW |
1,549
In-stock
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Texas Instruments | MOSFET P-CH 8V 7.4A 4-PICOSTAR | NexFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 4-XFLGA | 4-PICOSTAR | 600mW (Ta) | P-Channel | 8V | 7.4A (Ta) | 9.9 mOhm @ 1A, 4.5V | 1.05V @ 250µA | 8.5nC @ 4.5V | 1390pF @ 4V | 1.5V, 4.5V | -6V | ||||
VIEW |
3,888
In-stock
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Rohm Semiconductor | MOSFET P-CH 30V 4.5A TSMT6 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | TSMT6 (SC-95) | 600mW (Ta) | P-Channel | 30V | 4.5A (Ta) | 35 mOhm @ 4.5A, 10V | 2.5V @ 1mA | 14nC @ 5V | 1350pF @ 10V | 4V, 10V | ±20V |