- Operating Temperature :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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12 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
3,433
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 20V 1.2A UFM | π-MOSVI | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | UFM | 500mW (Ta) | N-Channel | - | 20V | 1.2A (Ta) | 310 mOhm @ 600mA, 10V | 2.3V @ 100µA | - | 36pF @ 10V | 4V, 10V | ±20V | |||
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VIEW |
3,455
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 20V 4.6A UFM | U-MOSV | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | UFM | 500mW (Ta) | P-Channel | - | 20V | 4.6A (Ta) | 46 mOhm @ 3A, 4.5V | 1V @ 1mA | 8.1nC @ 4.5V | 640pF @ 10V | 1.5V, 4.5V | ±8V | |||
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VIEW |
1,521
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 20V 1.8A UFM | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | UFM | 500mW (Ta) | P-Channel | - | 20V | 1.8A (Ta) | 149 mOhm @ 600mA, 4V | 1V @ 1mA | 7.7nC @ 4V | 331pF @ 10V | 1.5V, 4V | ±8V | |||
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VIEW |
2,855
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 20V 1.8A UFM | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | UFM | 500mW (Ta) | P-Channel | - | 20V | 1.8A (Ta) | 149 mOhm @ 600mA, 4V | 1V @ 1mA | 7.7nC @ 4V | 331pF @ 10V | 1.5V, 4V | ±8V | |||
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VIEW |
1,219
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 30V 1.4A UFM | U-MOSII | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | UFM | 500mW (Ta) | P-Channel | - | 30V | 1.4A (Ta) | 240 mOhm @ 650mA, 10V | - | - | 137pF @ 15V | 4V, 10V | ±20V | |||
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VIEW |
3,249
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 20V 4.4A UFM | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | UFM | 500mW (Ta) | P-Channel | - | 20V | 4.4A (Ta) | 25.8 mOhm @ 4A, 4.5V | 1V @ 1mA | 24.8nC @ 4.5V | 1800pF @ 10V | 1.5V, 4.5V | ±8V | |||
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VIEW |
3,761
In-stock
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Toshiba Semiconductor and Storage | X34 PB-F SMALL LOW ON RESISTANCE | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C | Surface Mount | 3-SMD, Flat Leads | UFM | 500mW (Ta) | P-Channel | - | 12V | 5.4A (Ta) | 17 mOhm @ 5A, 4.5V | 1V @ 1mA | 33nC @ 4.5V | 2700pF @ 10V | 1.2V, 4.5V | ±6V | |||
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VIEW |
1,322
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 2.2A UFM | U-MOSIII | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | UFM | 500mW (Ta) | N-Channel | - | 30V | 2.2A (Ta) | 100 mOhm @ 500mA, 4.5V | 1.1V @ 100µA | - | 245pF @ 10V | 2.5V, 4.5V | ±12V | |||
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VIEW |
971
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CHANNEL 30V 2A UFM | U-MOSII | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C | Surface Mount | 3-SMD, Flat Leads | UFM | 500mW (Ta) | P-Channel | - | 30V | 2A (Ta) | 117 mOhm @ 1A, 10V | 2.6V @ 1mA | - | 280pF @ 15V | 4V, 10V | ±20V | |||
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VIEW |
3,593
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 20V 4A UFM | U-MOSIV | Not For New Designs | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | UFM | 500mW (Ta) | P-Channel | - | 20V | 4A (Ta) | 38 mOhm @ 3A, 4V | 1V @ 1mA | 22.3nC @ 4V | 1484pF @ 10V | 1.5V, 4V | ±8V | |||
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VIEW |
601
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 20V 4.2A UFM | U-MOSIII | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | UFM | 500mW (Ta) | N-Channel | - | 20V | 4.2A (Ta) | 28 mOhm @ 3A, 4V | 1V @ 1mA | 13.6nC @ 4V | 1010pF @ 10V | 1.5V, 4V | ±10V | |||
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VIEW |
1,074
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 20V 5.5A | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | UFM | 500mW (Ta) | P-Channel | - | 20V | 5.5A (Ta) | 29.8 mOhm @ 3A, 4.5V | 1V @ 1mA | 12.8nC @ 4.5V | 840pF @ 10V | 1.5V, 4.5V | ±8V | |||
