Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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TK7P60W,RVQ
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Toshiba Semiconductor and Storage MOSFET N CH 600V 7A DPAK DTMOSIV Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 60W (Tc) N-Channel Super Junction 600V 7A (Ta) 600 mOhm @ 3.5A, 10V 3.7V @ 350µA 15nC @ 10V 490pF @ 300V 10V ±30V
TK6P60W,RVQ
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2,270
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Toshiba Semiconductor and Storage MOSFET N CH 600V 6.2A DPAK DTMOSIV Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 60W (Tc) N-Channel Super Junction 600V 6.2A (Ta) 820 mOhm @ 3.1A, 10V 3.7V @ 310µA 12nC @ 10V 390pF @ 300V 10V ±30V
TK5P60W,RVQ
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1,724
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Toshiba Semiconductor and Storage MOSFET N CH 600V 5.4A DPAK DTMOSIV Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 60W (Tc) N-Channel Super Junction 600V 5.4A (Ta) 900 mOhm @ 2.7A, 10V 3.7V @ 270µA 10.5nC @ 10V 380pF @ 300V 10V ±30V
TK7P60W5,RVQ
RFQ
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RFQ
1,746
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Toshiba Semiconductor and Storage MOSFET N-CH 600V 7A DPAK DTMOSIV Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 60W (Tc) N-Channel Super Junction 600V 7A (Ta) 670 mOhm @ 3.5A, 10V 4.5V @ 350µA 16nC @ 10V 490pF @ 300V 10V ±30V