Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Vgs (Max) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IPB60R600CPATMA1
RFQ
VIEW
RFQ
728
In-stock
Infineon Technologies MOSFET N-CH 600V 6.1A TO263 CoolMOS™ Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 60W (Tc) N-Channel 600V 6.1A (Tc) 600 mOhm @ 3.3A, 10V 3.5V @ 220µA 27nC @ 10V 550pF @ 100V 10V ±20V
NDB6020P
RFQ
VIEW
RFQ
2,269
In-stock
ON Semiconductor MOSFET P-CH 20V 24A D2PAK - Last Time Buy Cut Tape (CT) MOSFET (Metal Oxide) -65°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 60W (Tc) P-Channel 20V 24A (Tc) 50 mOhm @ 12A, 4.5V 1V @ 250µA 35nC @ 5V 1590pF @ 10V 4.5V ±8V