Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
SI7413DN-T1-E3
RFQ
VIEW
RFQ
3,963
In-stock
Vishay Siliconix MOSFET P-CH 20V 8.4A 1212-8 TrenchFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8 PowerPAK® 1212-8 1.5W (Ta) P-Channel 20V 8.4A (Ta) 15 mOhm @ 13.2A, 4.5V 1V @ 400µA 51nC @ 4.5V - 1.8V, 4.5V ±8V
SI7411DN-T1-E3
RFQ
VIEW
RFQ
752
In-stock
Vishay Siliconix MOSFET P-CH 20V 7.5A 1212-8 TrenchFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8 PowerPAK® 1212-8 1.5W (Ta) P-Channel 20V 7.5A (Ta) 19 mOhm @ 11.4A, 4.5V 1V @ 300µA 41nC @ 4.5V - 1.8V, 4.5V ±8V
SI7107DN-T1-E3
RFQ
VIEW
RFQ
1,374
In-stock
Vishay Siliconix MOSFET P-CH 20V 9.8A 1212-8 TrenchFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8 PowerPAK® 1212-8 1.5W (Ta) P-Channel 20V 9.8A (Ta) 10.8 mOhm @ 15.3A, 4.5V 1V @ 450µA 44nC @ 4.5V - 1.8V, 4.5V ±8V
SI7411DN-T1-GE3
RFQ
VIEW
RFQ
2,716
In-stock
Vishay Siliconix MOSFET P-CH 20V 7.5A 1212-8 TrenchFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8 PowerPAK® 1212-8 1.5W (Ta) P-Channel 20V 7.5A (Ta) 19 mOhm @ 11.4A, 4.5V 1V @ 300µA 41nC @ 4.5V - 1.8V, 4.5V ±8V
SI7107DN-T1-GE3
RFQ
VIEW
RFQ
1,309
In-stock
Vishay Siliconix MOSFET P-CH 20V 9.8A 1212-8 TrenchFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8 PowerPAK® 1212-8 1.5W (Ta) P-Channel 20V 9.8A (Ta) 10.8 mOhm @ 15.3A, 4.5V 1V @ 450µA 44nC @ 4.5V - 1.8V, 4.5V ±8V
SI4423DY-T1-E3
RFQ
VIEW
RFQ
2,554
In-stock
Vishay Siliconix MOSFET P-CH 20V 10A 8-SOIC TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 1.5W (Ta) P-Channel 20V 10A (Ta) 7.5 mOhm @ 14A, 4.5V 900mV @ 600µA 175nC @ 5V - 1.8V, 4.5V ±8V
SI4421DY-T1-E3
RFQ
VIEW
RFQ
1,338
In-stock
Vishay Siliconix MOSFET P-CH 20V 10A 8-SOIC TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 1.5W (Ta) P-Channel 20V 10A (Ta) 8.75 mOhm @ 14A, 4.5V 800mV @ 850µA 125nC @ 4.5V - 1.8V, 4.5V ±8V