Supplier Device Package :
Drain to Source Voltage (Vdss) :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IRF7703GTRPBF
RFQ
VIEW
RFQ
1,166
In-stock
Infineon Technologies MOSFET P-CH 40V 6A 8-TSSOP HEXFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-TSSOP (0.173", 4.40mm Width) 8-TSSOP 1.5W (Ta) P-Channel - 40V 6A (Ta) 28 mOhm @ 6A, 10V 3V @ 250µA 62nC @ 4.5V 5220pF @ 25V 4.5V, 10V ±20V
IRF7703TRPBF
RFQ
VIEW
RFQ
631
In-stock
Infineon Technologies MOSFET P-CH 40V 6A 8-TSSOP HEXFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-TSSOP (0.173", 4.40mm Width) 8-TSSOP 1.5W (Ta) P-Channel - 40V 6A (Ta) 28 mOhm @ 6A, 10V 3V @ 250µA 62nC @ 4.5V 5220pF @ 25V 4.5V, 10V ±20V
SSM6J801R,LF
RFQ
VIEW
RFQ
812
In-stock
Toshiba Semiconductor and Storage SMALL-SIGNAL PCH MOSFET UMOSVI U-MOSVI Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 6-SMD, Flat Leads 6-TSOP-F 1.5W (Ta) P-Channel - 20V 6A (Ta) 32.5 mOhm @ 3A, 4.5V 1V @ 1mA 12.8nC @ 4.5V 840pF @ 10V 1.5V, 4.5V +6V, -8V