Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SI4418DY-T1-GE3
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RFQ
2,336
In-stock
Vishay Siliconix MOSFET N-CH 200V 2.3A 8-SOIC TrenchFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 1.5W (Ta) N-Channel 200V 2.3A (Ta) 130 mOhm @ 3A, 10V 4V @ 250µA 30nC @ 10V - 6V, 10V ±20V
SI4418DY-T1-E3
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RFQ
3,971
In-stock
Vishay Siliconix MOSFET N-CH 200V 2.3A 8-SOIC TrenchFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 1.5W (Ta) N-Channel 200V 2.3A (Ta) 130 mOhm @ 3A, 10V 4V @ 250µA 30nC @ 10V - 6V, 10V ±20V
BSP220,115
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RFQ
1,639
In-stock
Nexperia USA Inc. MOSFET P-CH 200V 0.225A SOT223 - Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 1.5W (Ta) P-Channel 200V 225mA (Ta) 12 Ohm @ 200mA, 10V 2.8V @ 1mA - 90pF @ 25V 10V ±20V
BSP122,115
RFQ
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RFQ
3,772
In-stock
Nexperia USA Inc. MOSFET N-CH 200V 0.55A SOT223 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 1.5W (Ta) N-Channel 200V 550mA (Ta) 2.5 Ohm @ 750mA, 10V 2V @ 1mA - 100pF @ 25V 2.4V, 10V ±20V
SI7820DN-T1-E3
RFQ
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RFQ
1,573
In-stock
Vishay Siliconix MOSFET N-CH 200V 1.7A 1212-8 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8 PowerPAK® 1212-8 1.5W (Ta) N-Channel 200V 1.7A (Ta) 240 mOhm @ 2.6A, 10V 4V @ 250µA 18nC @ 10V - 6V, 10V ±20V
SI7820DN-T1-GE3
RFQ
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RFQ
2,046
In-stock
Vishay Siliconix MOSFET N-CH 200V 1.7A 1212-8 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8 PowerPAK® 1212-8 1.5W (Ta) N-Channel 200V 1.7A (Ta) 240 mOhm @ 2.6A, 10V 4V @ 250µA 18nC @ 10V - 6V, 10V ±20V
SI4464DY-T1-GE3
RFQ
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RFQ
2,785
In-stock
Vishay Siliconix MOSFET N-CH 200V 1.7A 8-SOIC TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 1.5W (Ta) N-Channel 200V 1.7A (Ta) 240 mOhm @ 2.2A, 10V 4V @ 250µA 18nC @ 10V - 6V, 10V ±20V
SI4464DY-T1-E3
RFQ
VIEW
RFQ
2,534
In-stock
Vishay Siliconix MOSFET N-CH 200V 1.7A 8-SOIC TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 1.5W (Ta) N-Channel 200V 1.7A (Ta) 240 mOhm @ 2.2A, 10V 4V @ 250µA 18nC @ 10V - 6V, 10V ±20V