- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
6 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||
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VIEW |
3,604
In-stock
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ON Semiconductor | MOSFET P-CH 60V 8A U8FL | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerWDFN | 8-WDFN (3.3x3.3) | 3W (Ta), 18W (Tc) | P-Channel | 60V | 2.4A (Ta) | 260 mOhm @ 3A, 10V | 2.5V @ 250µA | 6nC @ 10V | 250pF @ 25V | 4.5V, 10V | ±20V | |||
|
VIEW |
2,346
In-stock
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Diodes Incorporated | MOSFET P-CH 30V 8.7A PWRDI3333-8 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | PowerDI3333-8 | 950mW (Ta) | P-Channel | 30V | 8.7A (Ta) | 20 mOhm @ 8A, 10V | 2.5V @ 250µA | 16.5nC @ 10V | 1931pF @ 15V | 5V, 10V | ±25V | |||
|
VIEW |
3,938
In-stock
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Taiwan Semiconductor Corporation | MOSFET P-CH 30V 64A 8PDFN | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | 8-PDFN (3x3) | 50W (Tc) | P-Channel | 30V | 64A (Tc) | 8.5 mOhm @ 14A, 10V | 2.5V @ 250µA | 55nC @ 10V | 3234pF @ 15V | 4.5V, 10V | ±20V | |||
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|
VIEW |
2,784
In-stock
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ON Semiconductor | MOSFET P-CH 60V 8A U8FL | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerWDFN | 8-WDFN (3.3x3.3) | 3W (Ta), 18W (Tc) | P-Channel | 60V | 2.4A (Ta) | 260 mOhm @ 3A, 10V | 2.5V @ 250µA | 6nC @ 10V | 250pF @ 25V | 4.5V, 10V | ±20V | |||
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|
VIEW |
3,667
In-stock
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Taiwan Semiconductor Corporation | MOSFET P-CH 30V 36A 8PDFN | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | 8-PDFN (3x3) | 27.8W (Tc) | P-Channel | 30V | 36A (Tc) | 15 mOhm @ 10A, 10V | 2.5V @ 250µA | 29.3nC @ 10V | 1829pF @ 15V | 4.5V, 10V | ±20V | |||
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|
VIEW |
3,625
In-stock
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ON Semiconductor | MOSFET P-CH 60V 8A U8FL | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerWDFN | 8-WDFN (3.3x3.3) | 3W (Ta), 18W (Tc) | P-Channel | 60V | 2.4A (Ta) | 260 mOhm @ 3A, 10V | 2.5V @ 250µA | 6nC @ 10V | 250pF @ 25V | 4.5V, 10V | ±20V | |||
