Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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STB6N65M2
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RFQ
1,282
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STMicroelectronics MOSFET N-CH 650V 4A D2PAK MDmesh™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 60W (Tc) N-Channel - 650V 4A (Tc) 1.35 Ohm @ 2A, 10V 4V @ 250µA 9.8nC @ 10V 226pF @ 100V 10V ±25V
STB5N80K5
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RFQ
1,472
In-stock
STMicroelectronics N-CHANNEL 800 V, 1.50 OHM TYP., MDmesh™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 60W (Tc) N-Channel - 800V 4A (Tc) 1.75 Ohm @ 2A, 10V 5V @ 100µA 5nC @ 10V 177pF @ 100V 10V ±30V
R6004KNJTL
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RFQ
3,939
In-stock
Rohm Semiconductor MOSFET N-CHANNEL 600V 4A TO263 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 58W (Tc) N-Channel Schottky Diode (Isolated) 600V 4A (Tc) 980 mOhm @ 1.5A, 10V 5V @ 1mA 10.2nC @ 10V 280pF @ 25V 10V ±20V
STB4NK60ZT4
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RFQ
2,386
In-stock
STMicroelectronics MOSFET N-CH 600V 4A D2PAK SuperMESH™ Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 70W (Tc) N-Channel - 600V 4A (Tc) 2 Ohm @ 2A, 10V 4.5V @ 50µA 26nC @ 10V 510pF @ 25V 10V ±30V
IRF9510SPBF
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RFQ
1,041
In-stock
Vishay Siliconix MOSFET P-CH 100V 4A D2PAK - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB - 43W (Tc) P-Channel - 100V 4A (Tc) 1.2 Ohm @ 2.4A, 10V 4V @ 250µA 8.7nC @ 10V 200pF @ 25V 10V ±20V
IXFA4N100Q-TRL
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RFQ
3,045
In-stock
IXYS MOSFET N-CH 1000V 4A TO-263 HiPerFET™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (IXFA) 150W (Tc) N-Channel - 1000V 4A (Tc) 3 Ohm @ 2A, 10V 4.5V @ 1.5mA 39nC @ 10V 1050pF @ 25V 10V ±20V
R6004ENJTL
RFQ
VIEW
RFQ
3,896
In-stock
Rohm Semiconductor MOSFET N-CH 600V 4A LPT - Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB LPTS (D2PAK) 40W (Tc) N-Channel - 600V 4A (Tc) 980 mOhm @ 1.5A, 10V 4V @ 1mA 15nC @ 10V 250pF @ 25V 10V ±20V
IRF9510STRLPBF
RFQ
VIEW
RFQ
832
In-stock
Vishay Siliconix MOSFET P-CH 100V 4A D2PAK - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.7W (Ta), 43W (Tc) P-Channel - 100V 4A (Tc) 1.2 Ohm @ 2.4A, 10V 4V @ 250µA 8.7nC @ 10V 200pF @ 25V 10V ±20V