- Manufacture :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
2,541
In-stock
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Vishay Siliconix | MOSFET N-CH 650V 7A D2PAK | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263) | 78W (Tc) | N-Channel | - | 650V | 7A (Tc) | 600 mOhm @ 3A, 10V | 4V @ 250µA | 48nC @ 10V | 820pF @ 100V | 10V | ±30V | ||||
VIEW |
1,819
In-stock
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Rohm Semiconductor | MOSFET N-CH 600V 7A LPT | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | LPTS (D2PAK) | 40W (Tc) | N-Channel | - | 600V | 7A (Tc) | 620 mOhm @ 2.4A, 10V | 4V @ 1mA | 20nC @ 10V | 390pF @ 25V | 10V | ±20V | ||||
VIEW |
907
In-stock
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Rohm Semiconductor | MOSFET N-CHANNEL 600V 7A TO263 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 | 78W (Tc) | N-Channel | Schottky Diode (Isolated) | 600V | 7A (Tc) | 620 mOhm @ 2.4A, 10V | 5V @ 1mA | 14.5nC @ 10V | 470pF @ 25V | 10V | ±20V |