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7 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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2,667
In-stock
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ON Semiconductor | MOSFET P-CH 20V 3.5A 6-WFDN | µCool™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-WDFN (2x2) | 700mW (Ta) | P-Channel | - | 20V | 3.5A (Ta) | 40 mOhm @ 3A, 4.5V | 1V @ 250µA | 15.7nC @ 4.5V | 1329pF @ 16V | 1.5V, 4.5V | ±8V | |||
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1,380
In-stock
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Toshiba Semiconductor and Storage | MOSFET P CH 20V 6A 2-2AA1A | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 1W (Ta) | P-Channel | - | 20V | 6A (Ta) | 23.1 mOhm @ 4A, 4.5V | 1V @ 1mA | 24.8nC @ 4.5V | 1800pF @ 10V | 1.5V, 4.5V | ±8V | |||
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VIEW |
702
In-stock
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Toshiba Semiconductor and Storage | MOSFET P CH 20V 6A 2-2AA1A | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 1W (Ta) | P-Channel | - | 20V | 6A (Ta) | 32.4 mOhm @ 3A, 4.5V | 1V @ 1mA | 12.8nC @ 10V | 840pF @ 10V | 1.5V, 4.5V | ±8V | |||
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VIEW |
1,922
In-stock
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Micro Commercial Co | MOSFET P-CH 12V 8A DFN202 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | DFN2020-6J | - | P-Channel | - | 12V | 8A (Ta) | 28 mOhm @ 5A, 4.5V | 1V @ 250µA | 21nC @ 4.5V | 1275pF @ 6V | 1.5V, 4.5V | ±8V | |||
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VIEW |
1,163
In-stock
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ON Semiconductor | MOSFET N-CH 30V 2.5A 6-WDFN | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-WDFN (2x2) | 710mW (Ta) | N-Channel | Schottky Diode (Isolated) | 30V | 2.5A (Tj) | 70 mOhm @ 2A, 4.5V | 1V @ 250µA | 6.5nC @ 4.5V | 427pF @ 15V | 1.5V, 4.5V | ±8V | |||
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VIEW |
2,210
In-stock
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ON Semiconductor | MOSFET N-CH 20V 6QFN | PowerTrench® | Last Time Buy | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-MicroFET (2x2) | 1.9W (Ta) | N-Channel | - | 20V | 9.4A (Ta) | 14.5 mOhm @ 9.4A, 4.5V | 1V @ 250µA | 17.5nC @ 4.5V | 1680pF @ 10V | 1.5V, 4.5V | ±8V | |||
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VIEW |
712
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 20V 10A UDFN6B | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 1W (Ta) | P-Channel | - | 20V | 10A (Ta) | 15.3 mOhm @ 4A, 4.5V | 1V @ 1mA | 29.9nC @ 4.5V | 2600pF @ 10V | 1.5V, 4.5V | ±8V | |||
