- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
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9 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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614
In-stock
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ON Semiconductor | MOSFET N-CH 100V 3.3A 6-MLP | PowerTrench® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-MicroFET (2x2) | 2.4W (Ta) | N-Channel | - | 100V | 3.3A (Ta) | 88 mOhm @ 3.3A, 10V | 3V @ 250µA | 7.3nC @ 10V | 450pF @ 50V | 4.5V, 10V | ±20V | |||
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1,368
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 9A UDFN6B | U-MOSVII | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 1.25W (Ta) | N-Channel | - | 30V | 9A (Ta) | 19.5 mOhm @ 4A, 10V | 2.5V @ 100µA | 4.8nC @ 4.5V | 620pF @ 15V | 4.5V, 10V | ±20V | |||
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2,394
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 40V 12A 6-UDFNB | U-MOSIX-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 2.5W (Ta) | N-Channel | - | 40V | 12A (Ta) | 11.6 mOhm @ 4A, 10V | 2.4V @ 100µA | 7.5nC @ 4.5V | 1110pF @ 20V | 4.5V, 10V | ±20V | |||
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2,922
In-stock
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Toshiba Semiconductor and Storage | X34 SMALL LOW ON RESISTANCE NCH | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 2.5W (Ta) | N-Channel | - | 100V | 3.5A (Ta) | 69 mOhm @ 2A, 10V | 2.5V @ 100µA | 3.2nC @ 4.5V | 430pF @ 15V | 4.5V, 10V | ±20V | |||
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3,496
In-stock
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Toshiba Semiconductor and Storage | MOSFET NCH 30V 15A UDFNB | U-MOSIX-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TA) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 1.25W (Ta) | N-Channel | - | 30V | 15A (Ta) | 8.9 mOhm @ 4A, 10V | 2.1V @ 100µA | 7.5nC @ 4.5V | 1130pF @ 15V | 4.5V, 10V | ±20V | |||
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3,096
In-stock
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ON Semiconductor | MOSFET N-CH 60V 6-MLP | PowerTrench® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-MicroFET (2x2) | 2.4W (Ta) | N-Channel | - | 60V | 7.5A (Ta) | 23 mOhm @ 7.5A, 10V | 3V @ 250µA | 17nC @ 10V | 1235pF @ 30V | 4.5V, 10V | ±20V | |||
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1,889
In-stock
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Texas Instruments | MOSFET N-CH 30V 22A 6SON | NexFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-SON (2x2) | 2.5W (Ta) | N-Channel | - | 30V | 22A (Ta) | 29 mOhm @ 5A, 4.5V | 2V @ 250µA | 3.1nC @ 4.5V | 468pF @ 15V | 4.5V, 10V | ±20V | |||
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1,971
In-stock
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Texas Instruments | MOSFET N-CH 20V 22A 6-SON | NexFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-SON (2x2) | 2.5W (Ta) | N-Channel | - | 20V | 22A (Ta) | 15 mOhm @ 5A, 10V | 1.9V @ 250µA | 6.7nC @ 10V | 419pF @ 10V | 4.5V, 10V | ±20V | |||
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988
In-stock
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ON Semiconductor | MOSFET N-CH 40V 6-MLP | PowerTrench® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-MicroFET (2x2) | 2.4W (Ta) | N-Channel | - | 40V | 10A (Tc) | 14 mOhm @ 10A, 10V | 3V @ 250µA | 20nC @ 10V | 1260pF @ 20V | 4.5V, 10V | ±20V | |||
