Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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CPC3902ZTR
RFQ
VIEW
RFQ
3,712
In-stock
IXYS Integrated Circuits Division MOSFET N-CH 250V SOT-223 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 110°C (TA) Surface Mount TO-261-4, TO-261AA SOT-223 1.8W (Tc) N-Channel Depletion Mode 250V - 2.5 Ohm @ 300mA, 0V - - 230pF @ 20V 0V ±15V
BUK9880-55A/CUX
RFQ
VIEW
RFQ
2,542
In-stock
Nexperia USA Inc. MOSFET N-CH 55V 7A SOT223 TrenchMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 8W (Tc) N-Channel - 55V 7A (Tc) 73 mOhm @ 8A, 10V 2V @ 1mA 11nC @ 5V 584pF @ 25V 4.5V, 10V ±15V
CPC3960ZTR
RFQ
VIEW
RFQ
1,745
In-stock
IXYS Integrated Circuits Division MOSFET N-CH 600V SOT-223 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 125°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 1.8W (Ta) N-Channel Depletion Mode 600V - 44 Ohm @ 100mA, 0V - - 100pF @ 25V 0V ±15V
NTF3055L108T1G
RFQ
VIEW
RFQ
3,984
In-stock
ON Semiconductor MOSFET N-CH 60V 3A SOT223 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 1.3W (Ta) N-Channel - 60V 3A (Ta) 120 mOhm @ 1.5A, 5V 2V @ 250µA 15nC @ 5V 440pF @ 25V 5V ±15V
BUK98150-55A/CUF
RFQ
VIEW
RFQ
3,372
In-stock
Nexperia USA Inc. MOSFET N-CH 55V 5.5A SOT223 TrenchMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 8W (Tc) N-Channel - 55V 5.5A (Tc) 137 mOhm @ 5A, 10V 2V @ 1mA 5.3nC @ 5V 320pF @ 25V 4.5V, 10V ±15V
NCV8440ASTT1G
RFQ
VIEW
RFQ
1,725
In-stock
ON Semiconductor MOSFET N-CH 59V 2.6A SOT-223-4 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 1.69W (Ta) N-Channel - 59V 2.6A (Ta) 110 mOhm @ 2.6A, 10V 1.9V @ 100µA 4.5nC @ 4.5V 155pF @ 35V 3.5V, 10V ±15V
CPC3980ZTR
RFQ
VIEW
RFQ
2,580
In-stock
IXYS Integrated Circuits Division MOSFET N-CH 800V SOT-223 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 125°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 1.8W (Ta) N-Channel Depletion Mode 800V - 45 Ohm @ 100mA, 0V - - 115pF @ 25V 0V ±15V
NVF3055L108T1G
RFQ
VIEW
RFQ
1,115
In-stock
ON Semiconductor MOSFET N-CH 60V 3A SOT223 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 1.3W (Ta) N-Channel - 60V 3A (Ta) 120 mOhm @ 1.5A, 5V 2V @ 250µA 15nC @ 5V 440pF @ 25V 5V ±15V