- Manufacture :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
842
In-stock
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Vishay Siliconix | MOSFET N-CH 200V 0.96A SOT223 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 2W (Ta), 3.1W (Tc) | N-Channel | - | 200V | 960mA (Tc) | 1.5 Ohm @ 580mA, 10V | 4V @ 250µA | 8.2nC @ 10V | 140pF @ 25V | 10V | ±20V | |||
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VIEW |
2,523
In-stock
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Vishay Siliconix | MOSFET N-CH 250V 790MA SOT223 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 2W (Ta), 3.1W (Tc) | N-Channel | - | 250V | 790mA (Tc) | 2 Ohm @ 470mA, 10V | 4V @ 250µA | 8.2nC @ 10V | 140pF @ 25V | 10V | ±20V | |||
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VIEW |
3,967
In-stock
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Infineon Technologies | MOSFET N-CH 4SOT223 | SIPMOS® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | - | 240V | 350mA (Ta) | 6 Ohm @ 350mA, 10V | 1.8V @ 108µA | 6.4nC @ 10V | 140pF @ 25V | 4.5V, 10V | ±20V | |||
