Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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BSP225,115
RFQ
VIEW
RFQ
983
In-stock
Nexperia USA Inc. MOSFET P-CH 250V 0.225A SOT223 - Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 1.5W (Ta) P-Channel - 250V 225mA (Ta) 15 Ohm @ 200mA, 10V 2.8V @ 1mA - 90pF @ 25V 10V ±20V
BSP220,115
RFQ
VIEW
RFQ
1,639
In-stock
Nexperia USA Inc. MOSFET P-CH 200V 0.225A SOT223 - Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 1.5W (Ta) P-Channel - 200V 225mA (Ta) 12 Ohm @ 200mA, 10V 2.8V @ 1mA - 90pF @ 25V 10V ±20V
BSP230,135
RFQ
VIEW
RFQ
2,456
In-stock
Nexperia USA Inc. MOSFET P-CH 300V 0.21A SOT223 - Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 1.5W (Ta) P-Channel - 300V 210mA (Ta) 17 Ohm @ 170mA, 10V 2.55V @ 1mA - 90pF @ 25V 10V ±20V
STN1NF20
RFQ
VIEW
RFQ
767
In-stock
STMicroelectronics MOSFET N-CH 200V 1A SOT-223 STripFET™ II Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 2W (Ta) N-Channel - 200V 1A (Tc) 1.5 Ohm @ 500mA, 10V 4V @ 250µA 5.7nC @ 10V 90pF @ 25V 10V ±20V