Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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FQT7N10TF
RFQ
VIEW
RFQ
2,763
In-stock
ON Semiconductor MOSFET N-CH 100V 1.7A SOT-223 QFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223-4 2W (Tc) N-Channel 100V 1.7A (Tc) 350 mOhm @ 850mA, 10V 4V @ 250µA 7.5nC @ 10V 250pF @ 25V 10V ±25V
FQT3P20TF
RFQ
VIEW
RFQ
3,433
In-stock
ON Semiconductor MOSFET P-CH 200V 0.67A SOT-223 QFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223-4 2.5W (Tc) P-Channel 200V 670mA (Tc) 2.7 Ohm @ 335mA, 10V 5V @ 250µA 8nC @ 10V 250pF @ 25V 10V ±30V
FQT2P25TF
RFQ
VIEW
RFQ
1,764
In-stock
ON Semiconductor MOSFET P-CH 250V 0.55A SOT-223 QFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223-4 2.5W (Tc) P-Channel 250V 550mA (Tc) 4 Ohm @ 275mA, 10V 5V @ 250µA 8.5nC @ 10V 250pF @ 25V 10V ±30V
FQT5P10TF
RFQ
VIEW
RFQ
1,986
In-stock
ON Semiconductor MOSFET P-CH 100V 1A SOT-223 QFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223-4 2W (Tc) P-Channel 100V 1A (Tc) 1.05 Ohm @ 500mA, 10V 4V @ 250µA 8.2nC @ 10V 250pF @ 25V 10V ±30V
HUFA75307T3ST
RFQ
VIEW
RFQ
1,634
In-stock
ON Semiconductor MOSFET N-CH 55V 2.6A SOT-223-4 Automotive, AEC-Q101, UltraFET™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223-4 1.1W (Ta) N-Channel 55V 2.6A (Ta) 90 mOhm @ 2.6A, 10V 4V @ 250µA 17nC @ 20V 250pF @ 25V 10V ±20V
IRLL110TRPBF
RFQ
VIEW
RFQ
2,738
In-stock
Vishay Siliconix MOSFET N-CH 100V 1.5A SOT223 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 2W (Ta), 3.1W (Tc) N-Channel 100V 1.5A (Tc) 540 mOhm @ 900mA, 5V 2V @ 250µA 6.1nC @ 5V 250pF @ 25V 4V, 5V ±10V