- Series :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
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- Current - Continuous Drain (Id) @ 25°C :
- Gate Charge (Qg) (Max) @ Vgs :
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10 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
1,746
In-stock
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ON Semiconductor | MOSFET P-CH 60V 1.7A SOT-223 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | P-Channel | 60V | 1.7A (Ta) | 185 mOhm @ 2.4A, 10V | 4V @ 1mA | 14.3nC @ 10V | 492pF @ 25V | 10V | ±20V | |||
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VIEW |
1,532
In-stock
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Infineon Technologies | MOSFET N-CH 500V 0.4A SOT-223 | SIPMOS® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | 500V | 400mA (Ta) | 4 Ohm @ 400mA, 10V | 4V @ 1mA | - | 400pF @ 25V | 10V | ±20V | |||
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VIEW |
2,962
In-stock
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Infineon Technologies | MOSFET P-CH 60V 2.9A SOT-223 | SIPMOS® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | P-Channel | 60V | 2.9A (Ta) | 130 mOhm @ 2.9A, 10V | 4V @ 1mA | 33nC @ 10V | 875pF @ 25V | 10V | ±20V | |||
|
VIEW |
3,704
In-stock
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Nexperia USA Inc. | MOSFET N-CH 100V 3A SOT223 | TrenchMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -65°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1.8W (Ta), 8.3W (Tc) | N-Channel | 100V | 3A (Ta) | 90 mOhm @ 3A, 10V | 4V @ 1mA | 21nC @ 10V | 633pF @ 25V | 10V | ±20V | |||
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VIEW |
3,242
In-stock
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Nexperia USA Inc. | MOSFET N-CH 100V 3.5A SOT223 | TrenchMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -65°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 6.9W (Tc) | N-Channel | 100V | 3.5A (Tc) | 250 mOhm @ 1.75A, 10V | 4V @ 1mA | 7.4nC @ 10V | 300pF @ 25V | 10V | ±20V | |||
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VIEW |
3,322
In-stock
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Nexperia USA Inc. | MOSFET N-CH 55V 7A SOT223 | TrenchMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 8W (Tc) | N-Channel | 55V | 7A (Tc) | 80 mOhm @ 10A, 10V | 4V @ 1mA | 12nC @ 10V | 500pF @ 25V | 10V | ±20V | |||
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VIEW |
1,342
In-stock
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Infineon Technologies | MOSFET N-CH 800V 190MA SOT-223 | SIPMOS® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | 800V | 190mA (Ta) | 20 Ohm @ 190mA, 10V | 4V @ 1mA | - | 230pF @ 25V | 10V | ±20V | |||
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VIEW |
3,036
In-stock
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Infineon Technologies | MOSFET N-CH 400V 500MA SOT-223 | SIPMOS® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | - | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | 400V | 500mA (Ta) | 3 Ohm @ 500mA, 10V | 4V @ 1mA | - | 400pF @ 25V | 10V | ±20V | |||
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|
VIEW |
2,052
In-stock
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ON Semiconductor | MOSFET P-CH 60V 2.6A SOT223 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 (TO-261) | 1W (Ta) | P-Channel | 60V | 2.6A (Ta) | 170 mOhm @ 750mA, 10V | 4V @ 1mA | 14.3nC @ 10V | 492pF @ 25V | 10V | ±20V | |||
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|
VIEW |
2,402
In-stock
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Nexperia USA Inc. | MOSFET N-CH 55V 5.5A SOT223 | TrenchMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 8W (Tc) | N-Channel | 55V | 5.5A (Tc) | 150 mOhm @ 5A, 10V | 4V @ 1mA | - | 230pF @ 25V | 10V | ±20V | |||
