- Power Dissipation (Max) :
- FET Type :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
2,627
In-stock
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Diodes Incorporated | MOSFET N-CH 60V 2.1A SOT223 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 3W (Ta) | N-Channel | 60V | 2.1A (Ta) | 330 mOhm @ 3A, 10V | 3V @ 1mA | - | 350pF @ 25V | 5V, 10V | ±20V | |||
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VIEW |
2,746
In-stock
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Diodes Incorporated | MOSFET N-CH 60V 2.1A SOT223 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 3W (Ta) | N-Channel | 60V | 2.1A (Ta) | 330 mOhm @ 3A, 10V | 3V @ 1mA | - | 350pF @ 25V | 5V, 10V | ±20V | |||
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VIEW |
1,305
In-stock
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Diodes Incorporated | MOSFET P-CH 60V 2.1A SOT223 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1.8W (Ta), 14W (Tc) | P-Channel | 60V | 2.1A (Ta) | 250 mOhm @ 1A, 10V | 3V @ 250µA | 9.7nC @ 10V | 551pF @ 30V | 4.5V, 10V | ±20V | |||
